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HTE3910MOHM

High Voltage / Thick Film Resistors

Riedon

Riedon Powertron

IIRFR3910

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤115m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRD3910

20AND30AMPFASTRECOVERYRECTIFIERDIODES

Description ThisrangeoffastrecoverydiodesisdesignedforapplicationsinDCpowersupplies,inverters,choppers,ultrasonicsystemandforuseasafree-wheelingdiode. Features ■Shortreverserecoverytime ■Lowstoredcharge ■Widecurrentrange ■Excellentsurgecapabilities ■Stu

IRF

International Rectifier

IRD3910

RectifiersFastRecovery

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFR3910

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3910

PowerMOSFET(Vdss=100V,Rds=0.115ohm,Id=16A)

IRF

International Rectifier

IRFR3910

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤115m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR3910

TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.

Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V)

UMWUMW Rightway Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司(簡稱UMW?)

IRFR3910

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesolderingtechniques. Powerdissipationlevelsupto1.5watts arepossibleintypicalsurfacemountapplications. Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFR3910PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR3910PBF

UltraLowOn-Resistance

IRF

International Rectifier

IRFR3910PBF

ULTRALOWONRESISTANCE

IRF

International Rectifier

IRFR3910PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3910TR

UltraLowOn-Resistance

IRF

International Rectifier

IRFR3910TR

TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.

Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V)

UMWUMW Rightway Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司(簡稱UMW?)

IRFR3910TR

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesolderingtechniques. Powerdissipationlevelsupto1.5watts arepossibleintypicalsurfacemountapplications. Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFR3910TRLPBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR3910TRPBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR3910TRPBF

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRFRU3910

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    HTE3910MOHM

  • 制造商：

    RIEDON

  • 制造商全稱：

    Riedon Powertron

  • 功能描述：

    High Voltage/Thick Film Resistors

供應(yīng)商型號品牌批號封裝庫存備注價格
Riedon
20+
N/A
78
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HTE541040G9AT00
1
1
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Hitachi
23+
TO-18
12800
原裝正品代理商最優(yōu)惠價格,現(xiàn)貨或訂貨
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HGST
1844+
6528
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
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HYUNDAI
23+
TQFP-144
1005
全新原裝
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HYUNDAI
20+
QFP
500
樣品可出,優(yōu)勢庫存歡迎實(shí)單
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HYUNDAI
23+
QFP
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
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HY
2022+
600
全新原裝 貨期兩周
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Delta Electronics/Cyntec
24+
0603(1608 公制)
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價
Honeywell Microelectronics & P
21+
56-CPGA
56200
一級代理/放心采購
 詢價
更多HTE3910MOHM供應(yīng)商 更新時間2024-10-23 10:18:00

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