零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
HSP9520 | | Multilevel Pipeline Registers
ThesedevicesaremultilevelpipelineregistersimplementedusingalowpowerCMOSprocess.TheyarepinforpincompatiblereplacementsforindustrystandardmultilevelpipelineregisterssuchastheL29C520andL29C521.TheHSP9520andHSP5921aredirectreplacementsfortheAM29520andAM29521 | Intersil Intersil Corporation | Intersil |
HSP9520CP | | Multilevel Pipeline Registers
ThesedevicesaremultilevelpipelineregistersimplementedusingalowpowerCMOSprocess.TheyarepinforpincompatiblereplacementsforindustrystandardmultilevelpipelineregisterssuchastheL29C520andL29C521.TheHSP9520andHSP5921aredirectreplacementsfortheAM29520andAM29521 | Intersil Intersil Corporation | Intersil |
HSP9520CS | | Multilevel Pipeline Registers
ThesedevicesaremultilevelpipelineregistersimplementedusingalowpowerCMOSprocess.TheyarepinforpincompatiblereplacementsforindustrystandardmultilevelpipelineregisterssuchastheL29C520andL29C521.TheHSP9520andHSP5921aredirectreplacementsfortheAM29520andAM29521 | Intersil Intersil Corporation | Intersil |
IF9520NLPBF | | HEXFETPowerMOSFET
Description
FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF |
IRF9520 | | PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
IRF9520 | | FastSwitching
DESCRIPTION
ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.
TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
IRF9520 | | 6A,100V,0.600Ohm,P-ChannelPowerMOSFET
6A,100V,0.600Ohm,P-ChannelPowerMOSFET
ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicati | Intersil Intersil Corporation | Intersil |
IRF9520 | | PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
IRF9520N | | PowerMOSFET(Vdss=-100V,Rds(on)=0.48ohm,Id=-6.8A)
Description
FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF |
IRF9520NL | | AdvancedProcessTechnology
Description
TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
IRF9520NL | | AdvancedProcessTechnology | IRF International Rectifier | IRF |
IRF9520NL | | PowerMOSFET(Vdss=-100V,Rds(on)=0.48ohm,Id=-6.8A)
Description
FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF |
IRF9520NPBF | | HEXFETPowerMOSFET
Description
FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
IRF9520NPBF | | HEXFETPOWERMOSFET
Description
FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF |
IRF9520NPBF | | ADVANCEDPROCESSTECHNOLOGY | IRF International Rectifier | IRF |
IRF9520NS | | AdvancedProcessTechnology | IRF International Rectifier | IRF |
IRF9520NS | | AdvancedProcessTechnology
Description
TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
IRF9520NS | | PowerMOSFET(Vdss=-100V,Rds(on)=0.48ohm,Id=-6.8A)
Description
FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF |
IRF9520NSPBF | | HEXFETPowerMOSFET
Description
FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF |
IRF9520NSPBF | | ADVANCEDPROCESSTECHNOLOGY | IRF International Rectifier | IRF |