IRF9520中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
IRF9520規(guī)格書(shū)詳情
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET
This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17501.
Features
? 6A, 100V
? rDS(ON)= 0.600?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
產(chǎn)品屬性
- 型號(hào):
IRF9520
- 功能描述:
MOSFET P-Chan 100V 6.8 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220 |
3 |
詢(xún)價(jià) | |||
VISHAY |
2018+ |
TO-220 |
12000 |
VISHAY專(zhuān)營(yíng)進(jìn)口原裝現(xiàn)貨假一賠十 |
詢(xún)價(jià) | ||
HA |
23+ |
TO-220 |
65480 |
詢(xún)價(jià) | |||
IR |
22+ |
TO220 |
10000 |
原裝正品優(yōu)勢(shì)現(xiàn)貨供應(yīng) |
詢(xún)價(jià) | ||
VISHAY/威世 |
24+23+ |
TO-220 |
12580 |
16年現(xiàn)貨庫(kù)存供應(yīng)商終端BOM表可配單提供樣品 |
詢(xún)價(jià) | ||
IR |
2023+ |
TO-220 |
50000 |
原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
HARRIS |
21+ |
TO220 |
12588 |
原裝正品,自己庫(kù)存 假一罰十 |
詢(xún)價(jià) | ||
ir |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢(xún)價(jià) | ||
IR |
23+ |
TO-220 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)! |
詢(xún)價(jià) | ||
SAMSUNG |
05+ |
原廠原裝 |
4650 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢(xún)價(jià) |
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