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INA230AIRGTT

High-orLow-SideMeasurement,BidirectionalCURRENT/POWERMONITORwithI2CInterface

TI1Texas Instruments

德州儀器

INA230AIRGTT

INA23036-V,16-Bit,I2COutputCurrent,VoltageandPowerMonitorWithAlert

TITexas Instruments

德州儀器美國(guó)德州儀器公司

INA230AIRGTT

High-orLow-SideMeasurement

TITexas Instruments

德州儀器美國(guó)德州儀器公司

INA230AIRGTT

High-orLow-SideMeasurement,BidirectionalCURRENT/POWERMONITORwithI2CInterface

TI1Texas Instruments

德州儀器

INA230EVM

INA230EVMEvaluationBoardandSoftwareTutorial

TI1Texas Instruments

德州儀器

IRF230

N-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF230

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF230

8.0Aand9.0A,150Vand200V,0.4and0.6Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF230

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFET

SEME-LAB

Seme LAB

IRF230

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-204AA/AE)

200Volt,0.40?HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantag

IRF

International Rectifier

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更多HNTS230USCA供應(yīng)商 更新時(shí)間2025-3-29 14:23:00

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