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INA230EVM

INA230EVM Evaluation Board and Software Tutorial

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

INA230EVM

包裝：盒 功能：電流監(jiān)控器 類別：開(kāi)發(fā)板，套件，編程器 評(píng)估和演示板及套件 描述：EVAL MODULE FOR INA230

TITexas Instruments

德州儀器美國(guó)德州儀器公司

IRF230

N-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF230

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF230

8.0Aand9.0A,150Vand200V,0.4and0.6Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF230

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFET

SEME-LAB

Seme LAB

IRF230

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-204AA/AE)

200Volt,0.40?HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantag

IRF

International Rectifier

IRF230

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF230

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF230

HighPower,HighSpeedApplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF230

N-ChannelPowerMosfets

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRFE230

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFE230

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

PartNumberBVDSSRDS(on)ID IRFE230200V0.40?5.5A Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerst

IRF

International Rectifier

IRFE230

SimpleDriveRequirements

IRF

International Rectifier

IRFF230

5.5A,200V,0.400Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFF230

N-CHANNELENHANCEMENT

SEME-LAB

Seme LAB

IRFR230

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatest processingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedand

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR230A

AdvancedPowerMOSFET

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10A(Max.)@VDS=200V LowRDS(ON):0.333(Typ.) W m

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFR230A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR230B

200VN-ChannelMOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulsein

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    INA230EVM

  • 制造商：

    Texas Instruments

  • 類別：

    開(kāi)發(fā)板，套件，編程器 > 評(píng)估和演示板及套件

  • 包裝：

    盒

  • 類型：

    電源管理

  • 功能：

    電流監(jiān)控器

  • 嵌入式：

    無(wú)

  • 使用的 IC/零件：

    INA230

  • 主要屬性：

    分流監(jiān)控器

  • 所含物品：

    板，電纜

  • 描述：

    EVAL MODULE FOR INA230

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
22+
NA
3
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 詢價(jià)
TI
24+
20000
絕對(duì)原裝現(xiàn)貨
 詢價(jià)
TI
23+
NA
62
評(píng)估開(kāi)發(fā)套件
 詢價(jià)
TI/德州儀器
23+
8355
只做原裝現(xiàn)貨/實(shí)單可談/支持含稅拆樣
 詢價(jià)
TI德州儀器
22+
DSBGA-12
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)
 詢價(jià)
TI/德州
2018+
DSBGA
32500
德州代理承諾銷售原裝正品公司可開(kāi)正規(guī)17%增值稅票
 詢價(jià)
TI
500
詢價(jià)
IDT
23+
SOP8
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
TI
2020+
DSBGA12
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢價(jià)
Texas Instruments
21+
12-DSBGA (1.65x1.39)
65200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
更多INA230EVM供應(yīng)商 更新時(shí)間2024-11-7 10:08:00

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