| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
HN1B01F | Audio-Frequency General-Purpose Amplifier Applications Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | |
HN1B01F | Audio-Frequency General-Purpose Amplifier Applications AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | |
HN1B01F | Audio-Frequency General-Purpose Amplifier Applications AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | |
HN1B01F | NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | |
HN1B01F | Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | |
Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features ?HighVoltageandHighCurrent:VCEO=50V,IC=200mA ?HighhFE:hFE=200~400 ?MoistureSensitivityLevel:1 ?ESDRating?HumanBodyModel:3A ?MachineModel:C ?Pb?F | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features ?HighVoltageandHighCurrent:VCEO=50V,IC=200mA ?HighhFE:hFE=200~400 ?MoistureSensitivityLevel:1 ?ESDRating?HumanBodyModel:3A ?MachineModel:C ?Pb?F | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
Complementary Dual General Purpose Amplifier Transistor ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features ?HighVoltageandHighCurrent:VCEO=50V,IC=200mA ?HighhFE:hFE=200~400 ?MoistureSensitivityLevel:1 ?ESDRating ?HumanBodyModel:3A ?MachineModel:C ?SPrefixforAutomo | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Audio-Frequency General-Purpose Amplifier Applications AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Audio-Frequency General-Purpose Amplifier Applications AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Audio-Frequency General-Purpose Amplifier Applications Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-N/P
- 性質(zhì)：
表面帖裝型 （SMD）
- 封裝形式：
貼片封裝
- 極限工作電壓：
50V
- 最大電流允許值：
0.15A
- 最大工作頻率：
120MHZ
- 引腳數(shù)：
6
- 可代換的型號(hào)：
- 最大耗散功率：
- 放大倍數(shù)：
- 圖片代號(hào)：
H-23
- vtest：
50
- htest：
120000000
- atest：
0.15
- wtest：
0
詳細(xì)參數(shù)
- 型號(hào)：
HN1B01F
- 制造商：
Panasonic Industrial Company
- 功能描述：
TRANSISTOR
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/東芝 |
20+ |
TSOP-6 |
120000 |
原裝正品 可含稅交易 |
詢價(jià) | ||
TOSHIBA/東芝 |
23+ |
TSOP-6 |
3000 |
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量?jī)r(jià)格低 |
詢價(jià) | ||
TOSHIBA |
16+ |
原廠封裝 |
63000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
TOSHIBA |
23+ |
SOT-163 |
63000 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
TOSHIBA/東芝 |
22+ |
SOT-163 |
9600 |
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單! |
詢價(jià) | ||
TOSHIBA |
23+ |
SOT-163 |
46098 |
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) | ||
TOSHIBA |
23+ |
SOT-163 |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
TOSHIBA/東芝 |
23+ |
SOT-163 |
50000 |
原裝正品 支持實(shí)單 |
詢價(jià) | ||
TOSHIBA |
23+ |
SOT-163 |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
ONSEMICONDUC |
05+ |
原廠原裝 |
58216 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) |
