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HM80N04K

N-Channel Enhancement Mode Power MOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

LMAK80N04

N-ChannelEnhancementModePowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

NP80N04CHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04CHE

N-Channel40-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

NP80N04CHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N04DHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N04DHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04EHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04EHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N04KHE

N-Channel40V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
HMSEMI
24+
TO-252
500239
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
VBSEMI/臺(tái)灣微碧
23+
TO252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
VBsemi
23+
TO252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
VBsemi
21+
TO252
10065
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
VBsemi
23+
TO252
10065
原裝正品,有掛有貨,假一賠十
 詢價(jià)
VBSEMI/臺(tái)灣微碧
24+
TO252
60000
詢價(jià)
HMSEMI
23+
TO252
62388
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
華之美
兩年內(nèi)
NA
10
實(shí)單價(jià)格可談
 詢價(jià)
AEROSEMI
2016+
SOT23-5L
60000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
AEROSEMI
1844+
SOT23-5L
6852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
更多HM80N04K供應(yīng)商 更新時(shí)間2025-4-26 17:06:00

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