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HM6N10

N-Channel Enhancement Mode Power MOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

HM6N10R

N-Channel Enhancement Mode Power MOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

LMTM6N10

N-ChannelEnhancementModePowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

MTD6N10

POWERFIELDEFFECTTRANSISTOR,N-CHANNELENHANCEMENT-MODESILICONGATE,DPAKFORSURFACEMOUNTORINSERTIONMOUNT

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate DPAKforSurfaceMountorInsertionMount ThisTMOSPowerFETisdesignedforhighspeed,lowlosspowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrealydrivers.

Motorola

Motorola, Inc

MTD6N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTD6N10E

TMOSPOWERFET6.0AMPERES100VOLTSRDS(on)=0.400OHM

TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

Motorola

Motorola, Inc

MTD6N10E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP6N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP6N10

POWERFIELDEFFECTTRANSISTOR

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate

Motorola

Motorola, Inc

PHD6N10E

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforusei

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP6N10E

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PJD6N10A

100VN-ChannelMOSFET

Features ?RDS(ON),VGS@10V,ID@3A

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PJD6N10A

100VN-ChannelMOSFET

PANJITPan Jit International Inc.

強茂強茂股份有限公司

SSFP6N10

StarMOSTPowerMOSFET

Good-Ark

GOOD-ARK Electronics

STD6N10

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.35? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUG

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

UTT6N10

100V,6AN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

UTT6N10Z

N-ChannelPowerMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

UTT6N10Z

100V,6AN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

供應商型號品牌批號封裝庫存備注價格
H&M
23+
TO-92
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
GTM
23+
SOT-223
76456
原裝正品現(xiàn)貨
 詢價
GTM
22+
SOT-223
9600
原裝現(xiàn)貨,優(yōu)勢供應,支持實單!
 詢價
GTM
23+
SOT-223
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
GTM
2022
SOT-223
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
GTM
24+23+
SOT-223
12580
16年現(xiàn)貨庫存供應商終端BOM表可配單提供樣品
 詢價
GTM
23+
NA/
2000
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
GTM
23+
SOT-223
50000
原裝正品 支持實單
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HMSEMI
23+
TO-220
10000
公司只做原裝正品
 詢價
Hmsemi
TO-220
22+
6000
十年配單,只做原裝
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更多HM6N10供應商 更新時間2024-11-17 11:10:00

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