| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
ICofcollectorelectricmotorcontroller | INTEGRAL Integral Corp. | INTEGRAL | ||
ICofcollectorelectricmotorcontroller | INTEGRAL Integral Corp. | INTEGRAL | ||
HEXFET?TRANSISTORSP-CHANNELHEXDIP? HEXFET?TRANSISTORSP-CHANNELHEXDIP? 1-WATTTRATEDPOWERMOSFETsINA4-PIN,DUAL-IN-LINEPACKAGE FEATURES ■ForAutomaticInsertion ■Compact,EndStackable ■FastSwitching ■LowDriveCurrent ■EasyParalleled ■ExcellentTemperatureStability ■P-ChannelVersatility | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. FEATURES ?ForAutomatic | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
PowerMOSFET DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
ProtectiveCoverforTerminalBlocks
| PFBeijiafu (Beijing) Process Automation Control Equipment Co., Ltd 倍加福倍加福（北京）過程自動化控制設(shè)備有限公司 | PF | ||
M9336APXIeI/QArbitraryWaveformGenerator | KEYSIGHTKeysight Technologies 是德科技是德科技（中國）有限公司 | KEYSIGHT |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
通用型 （Uni）
- 封裝形式：
- 極限工作電壓：
50V
- 最大電流允許值：
0.2A
- 最大工作頻率：
300MHZ
- 引腳數(shù)：
- 可代換的型號：
BC547,
- 最大耗散功率：
0.5W
- 放大倍數(shù)：
β=900
- 圖片代號：
NO
- vtest：
50
- htest：
300000000
- atest：
0.2
- wtest：
0.5
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞薩 |
21+ |
65200 |
詢價 | ||||
Renesas |
21+ |
標(biāo)準(zhǔn)封裝 |
465 |
進(jìn)口原裝,訂貨渠道! |
詢價 | ||
RENESAS/瑞薩 |
23+ |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | |||
RENESAS/瑞薩 |
23+ |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | |||
RENESAS/瑞薩 |
24+ |
NC |
8600 |
正品原裝,正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
RENESAS/瑞薩 |
23+ |
NA/ |
2300 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
RENESAS/瑞薩 |
23+ |
TO-92 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
RENESAS/瑞薩 |
2022 |
TO-92 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
HITACHI |
4067 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | ||||
HITACHI/日立 |
23+ |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 |
