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10N120BN	文件：217.6 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
10N120BN	文件：81.67 Kbytes Page：7 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil
10N120BND	文件：110.92 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
10N120BND	文件：82.69 Kbytes Page：7 Pages	35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab	Intersil Intersil Corporation	Intersil
BRG10N120D	文件：770.08 Kbytes Page：6 Pages	Insulated-GateBipolarTransistorinaTO-3PPlasticPackage	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司	FOSHAN
HGTG10N120BN	文件：201.1 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTG10N120BN	文件：81.67 Kbytes Page：7 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil
HGTG10N120BN	文件：217.6 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTG10N120BND	文件：110.92 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTG10N120BND	文件：82.69 Kbytes Page：7 Pages	35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab	Intersil Intersil Corporation	Intersil
HGTP10N120BN	文件：81.67 Kbytes Page：7 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil
HGTP10N120BN	文件：201.1 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTP10N120BN	文件：217.6 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HM10N120T	文件：1.25182 Mbytes Page：8 Pages	1200V/10ATrenchFieldStopIGBT	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司	HMSEMI
MPCK10N120A	文件：329.45 Kbytes Page：5 Pages	ZeroReverseRecoveryCurrent Features ?ZeroReverseRecoveryCurrent ?ZeroForwardRecoveryVoltage ?Temperature-independentSwitchingBehavior ?PositiveTemperatureCoefficientonVF ?High-speedswitchingpossible ?Highsurgecurrentcapability Applications ?SwitchModePowerSupply(SMPS) ?MotorDrives ?	FS First Silicon Co., Ltd	FS
SCT10N120	文件：791.79 Kbytes Page：14 Pages	HighvoltageDC-DCconverters	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
SCT10N120AG	文件：238.62 Kbytes Page：14 Pages	Automotive-gradesiliconcarbidePowerMOSFET1200V,12A,520mΩ(typ.,TJ=150°C)inanHiP247package Features ?AEC-Q101qualified ?Verytightvariationofon-resistancevs.temperature ?Veryhighoperatingtemperaturecapability(TJ=200°C) ?Veryfastandrobustintrinsicbodydiode ?Lowcapacitance Applications ?Motordrives ?EVchargers ?HighvoltageDC-DCconverters ?Swi	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
SGH10N120RUF	文件：456.93 Kbytes Page：7 Pages	ShortCircuitRatedIGBT GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswher	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
SGH10N120RUFD	文件：511.24 Kbytes Page：8 Pages	ShortCircuitRatedIGBT GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinvertersw	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
UG10N120	文件：153.29 Kbytes Page：3 Pages	NPTSERIESN-CHANNELIGBT	UTCUnisonic Technologies 友順友順科技股份有限公司	UTC

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型號(hào)：
HGTP10N120BNFS
制造商：
Fairchild Semiconductor Corporation

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市鵬和科技有限公司	HGTP10N120BNG10N120BN	FSC	24+	TO220	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	HGTP10N120BN功率三極管	FAIRCHILD/仙童	23+	TO220	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市科芯源微電子有限公司	HGTP10N120BN功率三極管	FAIRCHILD/仙童	24+	TO220	58000	全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	HGTP10N120BN其他被動(dòng)元件	FAIRCHILD/仙童	21+	TO-220	9852	只做原裝正品現(xiàn)貨!或訂貨假一賠十!	詢價(jià)
深圳市智創(chuàng)誠(chéng)芯電子科技有限公司	HGTP10N120BN其他被動(dòng)元件	FAIRCHILD/仙童	TO-220	貨真價(jià)實(shí),假一罰十	25000		詢價(jià)
深圳廊盛科技有限公司	HGTP10N120BN其他被動(dòng)元件	FAIRCHILD/仙童	22+	TO-220	50000	原裝正品.假一罰十	詢價(jià)
深圳市賽美科科技有限公司	HGTP10N120BN其他被動(dòng)元件	ON/安森美		NA	275000	一級(jí)代理原裝正品,價(jià)格優(yōu)勢(shì),長(zhǎng)期供應(yīng)!	詢價(jià)
深圳市云美電子科技有限公司	HGTP10N120BN其他被動(dòng)元件	FAIRCHILD/仙童	22+	TO-220	40256	本公司只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	HGTP10N121BN	FAIRCHILD仙童	23+	TO221	10000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳市一線半導(dǎo)體有限公司	HGTP10N40C1	Intersil	24+	TO-220	8866		詢價(jià)

更多HGTP10N120BNFS供應(yīng)商更新時(shí)間2024-11-16 10:20:00

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