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HGTP10N120BN

35A, 1200V, NPT Series N-Channel IGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP10N120BN

35A, 1200V, NPT Series N-Channel IGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTP10N120BN

35A, 1200V, NPT Series N-Channel IGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP10N120BN

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-220-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 1200V 35A 298W TO220AB

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HM10N120T

1200V/10ATrenchFieldStopIGBT

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

MPCK10N120A

ZeroReverseRecoveryCurrent

Features ?ZeroReverseRecoveryCurrent ?ZeroForwardRecoveryVoltage ?Temperature-independentSwitchingBehavior ?PositiveTemperatureCoefficientonVF ?High-speedswitchingpossible ?Highsurgecurrentcapability Applications ?SwitchModePowerSupply(SMPS) ?MotorDrives ?

FS

First Silicon Co., Ltd

SCT10N120

HighvoltageDC-DCconverters

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

SCT10N120AG

Automotive-gradesiliconcarbidePowerMOSFET1200V,12A,520mΩ(typ.,TJ=150°C)inanHiP247package

Features ?AEC-Q101qualified ?Verytightvariationofon-resistancevs.temperature ?Veryhighoperatingtemperaturecapability(TJ=200°C) ?Veryfastandrobustintrinsicbodydiode ?Lowcapacitance Applications ?Motordrives ?EVchargers ?HighvoltageDC-DCconverters ?Swi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

SGH10N120RUF

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswher

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGH10N120RUFD

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinvertersw

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

UG10N120

NPTSERIESN-CHANNELIGBT

UTCUnisonic Technologies

友順友順科技股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    HGTP10N120BN

  • 制造商:

    onsemi

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

  • IGBT 類型:

    NPT

  • 不同?Vge、Ic 時?Vce(on)(最大值):

    2.7V @ 15V,10A

  • 開關(guān)能量:

    320μJ(開),800μJ(關(guān))

  • 輸入類型:

    標準

  • 25°C 時 Td(開/關(guān))值:

    23ns/165ns

  • 測試條件:

    960V,10A,10 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3

  • 供應(yīng)商器件封裝:

    TO-220-3

  • 描述:

    IGBT 1200V 35A 298W TO220AB

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD
19+
TO220
22500
詢價
onsemi(安森美)
23+
TO-220
942
原廠訂貨渠道,支持BOM配單一站式服務(wù)
詢價
FAIRCHILD原裝正品專賣
23+
TO-220
59526
專注原裝正品現(xiàn)貨特價中量大可定
詢價
FAIRCHILD/仙童
23+
TO220
30000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
FAIRCHILD/仙童
24+
TO220
780
原廠授權(quán)代理 價格絕對優(yōu)勢
詢價
FAIRCHIL
23+
TO-220
8600
全新原裝現(xiàn)貨
詢價
仙童
06+
TO-220
5000
原裝庫存
詢價
FSC
2020+
TO-220
3227
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
FSC
2016+
TO-220
2940
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
更多HGTP10N120BN供應(yīng)商 更新時間2025-1-1 16:04:00