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HGTG20N120CND

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

Intersil

Intersil Corporation

HGTG20N120CND

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HM20N120AB

KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM20N120T

H&MNPTIGBTsofferlowerlossesandhigherenergy

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM20N120TB

KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IHW20N120R

HighSpeed2-Technology

?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW20N120R

ReverseConductingIGBTwithmonolithicbodydiode

Features: ?PowerfulmonolithicBodyDiodewithverylowforwardvoltage ?Bodydiodeclampsnegativevoltages ?TrenchandFieldstoptechnologyfor1200Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior ?NPTtechnologyoffers

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IXDA20N120AS

HighVoltageIGBT

HighVoltageIGBT ShortCircuitSOACapabilitySquareRBSOA Features ●NPTIGBTtechnology ●highswitchingspeed ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●Internationalstandardp

IXYS

IXYS Corporation

IXDH20N120

HighVoltageIGBTwithoptionalDiode

HighVoltageIGBTwithoptionalDiode ShortCircuitSOACapabilitySquareRBSOA Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientfor easyparalleling ●MOSinpu

IXYS

IXYS Corporation

IXER20N120

NPT3IGBTinISOPLUS247

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    HGTG20N120CND

  • 制造商：

    FAIRCHILD

  • 制造商全稱：

    Fairchild Semiconductor

  • 功能描述：

    63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
INTERSIL
17+
TO-247
31518
原裝正品 可含稅交易
 詢價(jià)
FAIRCHILD
23+
TO-247
9526
詢價(jià)
FAIRCHILD
05+
原廠原裝
4699
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
Intersil
24+
TO-247
8866
詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
FAI
23+
65480
詢價(jià)
INTERSIL
20+
TO-247
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價(jià)
FAIRCHILD/仙童
23+
TO247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
INTERSIL
23+
TO-247
6000
原裝正品，支持實(shí)單
 詢價(jià)
FAIRCHILD/仙童
23+
TO247
20000
原裝正品 歡迎咨詢
 詢價(jià)
更多HGTG20N120CND供應(yīng)商 更新時(shí)間2025-4-12 14:00:00

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