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FQP33N10

100V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP33N10

N-Channel Mosfet Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQP33N10L

100V LOGIC N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitching performance,andw

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF33N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF33N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.052Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQPF33N10L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.052Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQPF33N10L

100VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

GLU33N10

SURFCOILSMTINDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

GLX33N10

SURFCOILSMTINDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

ISP33N10L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

KSM33N10

100VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTB33N10E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTB33N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.06Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTB33N10E

TMOSPOWERFET33AMPERES100VOLTS

TMOSE-FET?HighEnergyPowerFET N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET3.0AMPERES500VOLTSRDS(on)=3.0OHMS ThisadvancedhighvoltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffer

Motorola

Motorola, Inc

MTP33N10

TMOSPOWERFET33AMPERES100VOLTSRDS(on)=0.06OHM

TMOSE-FETPowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfor

Motorola

Motorola, Inc

MTP33N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=33A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=60mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP33N10E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP33N10E

TMOSPOWERFET33AMPERES100VOLTSRDS(on)=0.06OHM

TMOSE-FETPowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfor

Motorola

Motorola, Inc

MTW33N10E

TMOSPOWERFET33AMPERES100VOLTSRDS(on)=0.06OHM

TMOSE?FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE-FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain-to-sourcediodewithafas

Motorola

Motorola, Inc

PHP33N10

N-Channel100-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

詳細參數(shù)

  • 型號：

    FQP33N10

  • 功能描述：

    MOSFET 100V N-Channel QFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
FAIRCHI
17+
TO-220
8293
原裝現(xiàn)貨價格絕對優(yōu)勢Y
 詢價
ONSEMI
2021
NA
12000
全新原裝!優(yōu)勢庫存熱賣中!
 詢價
FAIRCHILD/仙童
24+
TO-220
432
只做原廠渠道 可追溯貨源
 詢價
ON
23+
TO-220
2000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
ON
23+
TO-220
10000
正規(guī)渠道,只有原裝!
 詢價
TRANSISTOR
2023+
TO-220
15000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價
FAIRCHILD/仙童
11+
TO-220
612
只做原裝正品
 詢價
ON(安森美)
2023+
TO-220-3
4550
全新原裝正品
 詢價
ON/安森美
23+
TO-220
9048
原廠可訂貨,技術支持,直接渠道?？珊灡９┖贤?/div>
 詢價
Freescale(飛思卡爾)
2307+
8358
只做原裝現(xiàn)貨假一罰十!價格最低!只賣原裝現(xiàn)貨
 詢價
更多FQP33N10供應商 更新時間2024-10-26 10:18:00

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