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MTP33N10E中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書

MTP33N10E
廠商型號(hào)

MTP33N10E

功能描述

TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM

文件大小

240.39 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-18 22:30:00

MTP33N10E規(guī)格書詳情

TMOS E-FET Power Field Effect Transistor

N-Channel Enhancement-Mode Silicon Gate

This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

? Avalanche Energy Specified

? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

? Diode is Characterized for Use in Bridge Circuits

? IDSS and VDS(on) Specified at Elevated Temperature

產(chǎn)品屬性

  • 型號(hào):

    MTP33N10E

  • 制造商:

    MOTOROLA

  • 制造商全稱:

    Motorola, Inc

  • 功能描述:

    TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM

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