MTP33N10E中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書
MTP33N10E規(guī)格書詳情
TMOS E-FET Power Field Effect Transistor
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號(hào):
MTP33N10E
- 制造商:
MOTOROLA
- 制造商全稱:
Motorola, Inc
- 功能描述:
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
O |
2020+ |
TO |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
ON/安森美 |
24+ |
TO220 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
詢價(jià) | ||
VBsemi |
21+ |
TO220 |
10065 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
INFINEON/英飛凌 |
24+ |
TO |
56000 |
公司進(jìn)口原裝現(xiàn)貨 批量特價(jià)支持 |
詢價(jià) | ||
ON/安森美 |
2022+ |
TO-220 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價(jià) | ||
VB |
TO220AB |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
ON |
23+ |
TO-220 |
6893 |
詢價(jià) | |||
ON |
24+ |
TO-220 |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!? |
詢價(jià) | ||
ON/安森美 |
23+ |
NA/ |
17138 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票 |
詢價(jià) | ||
ON |
19+ |
TO-220 |
86192 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價(jià) |