MTW33N10E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
MTW33N10E |
| 功能描述 | TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| 文件大小 |
227.84 Kbytes |
| 頁面數(shù)量 |
8 頁 |
| 生產(chǎn)廠商 | Motorola, Inc |
| 企業(yè)簡(jiǎn)稱 |
Motorola【摩托羅拉】 |
| 中文名稱 | 加爾文制造公司官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-4-10 22:50:00 |
| 人工找貨 | MTW33N10E價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
MTW33N10E規(guī)格書詳情
TMOS E?FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
? Isolated Mounting Hole Reduces Mounting Hardware
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
NA |
20000 |
全新原裝假一賠十 |
詢價(jià) | ||
ON |
2020+ |
TO247 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
2017+ |
TO247 |
6528 |
只做原裝正品假一賠十! |
詢價(jià) | |||
MIT |
24+ |
NA/ |
23210 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票 |
詢價(jià) | ||
MOT |
28 |
公司優(yōu)勢(shì)庫(kù)存 熱賣中!! |
詢價(jià) | ||||
MIT |
23+ |
SOD-323 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ON |
23+ |
TO-247 |
6893 |
詢價(jià) | |||
MIT |
24+ |
9780 |
詢價(jià) | ||||
MOT |
25+23+ |
TO247 |
13767 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
mot |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) |
