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HY6N60T

600V/6.0AN-ChannelEnhancementModeMOSFET

HY

HY ELECTRONIC CORP.

IRF6N60

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTAC

Suntac Electronic Corp.

IRF6N60FP

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTAC

Suntac Electronic Corp.

IRFIB6N60A

PowerMOSFET(Vdss=600V,Rds(on)max=0.75ohm,Id=5.5A)

Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowerswitching HighVoltageIsolation=2.5KVRMS? Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacteri

IRF

International Rectifier

IRFIB6N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFIB6N60A

VishaySiliconix

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC APPLICATIONS ?SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIB6N60APBF

HEXFETPowerMOSFET

Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowe

IRF

International Rectifier

IRFIB6N60APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

KF6N60D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=600V,ID=5A

KECKEC CORPORATION

KEC株式會社

KF6N60P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=600V,ID=6A

KECKEC CORPORATION

KEC株式會社

詳細(xì)參數(shù)

  • 型號：

    FQB6N60CTM

  • 功能描述：

    MOSFET N-CH/600V/6A/QFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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FAIRCHILD
SOT263
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
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FAIRCHILD
24+
SOT263
5000
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FAIRCHI
2020+
SOT263
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
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FAIRCHILD
21+
SOT263
4940
原裝現(xiàn)貨假一賠十
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Fairchild/ON
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
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FAIRCHILD
18+
SOT263
4940
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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ON Semiconductor
2022+
TO-263-3,D2Pak(2 引線 + 接片
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
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FSC
22+
NA
27003
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Fairchild
23+
33500
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Fairchild/ON
23+
TO2633 D2Pak (2 Leads + Tab) T
8000
只做原裝現(xiàn)貨
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更多FQB6N60CTM供應(yīng)商 更新時(shí)間2025-3-30 9:10:00

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