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FQB9N30

300V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI9N30

300VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP9N30

300VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP9N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9.0A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.45Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQPF9N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.0A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.45Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQPF9N30

300VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFB9N30A

PowerMOSFET(Vdss=300V,Rds(on)=0.45ohm,Id=9.3A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRF

International Rectifier

IRFB9N30A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFB9N30APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFB9N30APBF

HEXFET?PowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationofastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatlowerdi

IRF

International Rectifier

詳細參數

  • 型號：

    FQB9N30

  • 制造商：

    FAIRCHILD

  • 制造商全稱：

    Fairchild Semiconductor

  • 功能描述：

    300V N-Channel MOSFET

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
FAIRCHILD
1709+
SOT-263
32500
普通
 詢價
FAIRCHILD
2023+環(huán)?，F貨
TO263
10
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
 詢價
FAIRCHILD/仙童
23+
1
6500
專注配單,只做原裝進口現貨
 詢價
FAIRCHILD/仙童
23+
1
6500
專注配單,只做原裝進口現貨
 詢價
FAIRCHILD/仙童
23+
D2-PAKTO-263
24190
原裝正品代理渠道價格優(yōu)勢
 詢價
FAIRCHILD/仙童
21+
D2-PAKTO-263
30000
優(yōu)勢供應 實單必成 可13點增值稅
 詢價
FAIRCHILD/仙童
22+
D2-PAKTO-263
18000
原裝正品
 詢價
仙童
06+
TO-263
3800
原裝庫存
 詢價
FAIRCHILD
24+
TO-263(D2PAK)
8866
詢價
更多FQB9N30供應商 更新時間2025-3-19 17:16:00

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