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FQB12N50

500V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB12N50

Optimized Switch for Discontinuous Current Mode Power Factor Correction

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI12N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFBL12N50A

HEXFET?PowerMOSFET

IRF

International Rectifier

IXFA12N50P

PolarPowerMOSFETHiperFET

Polar?PowerMOSFETHiperFET? N-ChannelEnhancementModeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFA12N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH12N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH12N50F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

HiPerRF?PowerMOSFETs F-Class:MegaHertzSwitching

IXYS

IXYS Corporation

IXFH12N50F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFM12N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFP12N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=500mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFP12N50P

PolarPowerMOSFETHiperFET

Polar?PowerMOSFETHiperFET? N-ChannelEnhancementModeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFP12N50PM

PolarPowerMOSFETHiPerFET

Polar?PowerMOSFETHiPerFET?(ElectricallyIsolatedTab) N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?Plasticovermoldedtabforelectricalisolation ?Internationalstandardpackage ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easyt

IXYS

IXYS Corporation

IXFT12N50F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

HiPerRF?PowerMOSFETs F-Class:MegaHertzSwitching

IXYS

IXYS Corporation

IXTA12N50P

N-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?Dynamicdv/dtRating ?AvalancheRated ?FastIntrinsicRectifier ?LowQG ?LowRDS(on) ?LowDrain-to-TabCapacitance ?LowPackageInductance Advantages ?EasytoMount

IXYS

IXYS Corporation

IXTA12N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTH12N50

12AMPS,450-500V,0.4OM/0.5OM

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IXYS

IXYS Corporation

IXTH12N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTH12N50A

StandardPowerMOSFET

Features ●Internationalstandardpackages ●LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

IXTM12N50

12AMPS,450-500V,0.4OM/0.5OM

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    FQB12N50

  • 制造商：

    Rochester Electronics LLC

  • 制造商：

    Fairchild Semiconductor Corporation

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD
24+
TO-263
109950
詢價
仙童
06+
TO-263
3800
原裝
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
FAIRC
24+
TO-263
90000
一級代理商進口原裝現(xiàn)貨、價格合理
 詢價
FAIRCHILD/仙童
2022+
290
全新原裝 貨期兩周
 詢價
24+
TO-263
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
FAIRCHILD
1709+
SOT-263
32500
普通
 詢價
ON
21+
TO-263
100
原裝現(xiàn)貨假一賠十
 詢價
ON
22+
TO-263
32350
原裝正品 假一罰十 公司現(xiàn)貨
 詢價
FAIRCHILD/仙童
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多FQB12N50供應商 更新時間2024-11-19 16:30:00

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