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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
FQD2N80	文件：731.24 Kbytes Page：9 Pages	N-ChannelQFETMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD2N80	文件：639 Kbytes Page：9 Pages	800VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD2N80	文件：305.74 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=1.8A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FQD2N80D	文件：336.56 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ·FEATURES ·Drain-sourceon-resistance: RDS(on)≤6.3Ω@10V ·FastSwitchingSpeed ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·DESCRITION ·HighfastswitchingPowerSupply	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FQD2N80I	文件：348.18 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ·FEATURES ·Drain-sourceon-resistance: RDS(on)≤6.3Ω@10V ·FastSwitchingSpeed ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·DESCRITION ·HighfastswitchingPowerSupply	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FQD2N80TM	文件：731.24 Kbytes Page：9 Pages	N-ChannelQFETMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQI2N80	文件：659.15 Kbytes Page：9 Pages	800VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP2N80	文件：649.95 Kbytes Page：8 Pages	800VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP2N80	文件：302.73 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2.4A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FQPF2N80	文件：278.38 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=1.5A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FQPF2N80	文件：619.27 Kbytes Page：8 Pages	800VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU2N80	文件：731.24 Kbytes Page：9 Pages	N-ChannelQFETMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU2N80	文件：639 Kbytes Page：9 Pages	800VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU2N80	文件：331.13 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=1.8A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXTA2N80	文件：46.61 Kbytes Page：2 Pages	HighVoltageMOSFET HighVoltageMOSFET N-ChannelEnhancementModeAvalancheEnergyRated Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(	IXYS IXYS Corporation	IXYS
IXTA2N80	文件：299.62 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXTA2N80P	文件：162.65 Kbytes Page：5 Pages	PolarHVPowerMOSFET	IXYS IXYS Corporation	IXYS
IXTA2N80P	文件：300.11 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXTP2N80	文件：46.61 Kbytes Page：2 Pages	HighVoltageMOSFET HighVoltageMOSFET N-ChannelEnhancementModeAvalancheEnergyRated Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(	IXYS IXYS Corporation	IXYS
IXTP2N80	文件：295.44 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC

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詳細(xì)參數(shù)

型號(hào)：
FQB2N80TM
功能描述：
MOSFET 800V N-Channel QFET
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市振宏微科技有限公司	FQB2N80TM	FSC	23+	NA	1386	專做原裝正品,假一罰百!	詢價(jià)
深圳市百諾芯科技有限公司	FQB2N80TM	FAIRCHILD/仙童	23+	D2-PAKTO-263	24190	原裝正品代理渠道價(jià)格優(yōu)勢(shì)	詢價(jià)
深圳市仟禧電子有限公司	FQB2N80TM	FAIRCHILD/仙童	22+	SOT-263	20000	保證原裝正品,假一陪十	詢價(jià)
深圳市百域芯科技有限公司	FQB2N80TM	FAIRCHILD/仙童	21+	D2-PAKTO-263	30000	優(yōu)勢(shì)供應(yīng) 實(shí)單必成可13點(diǎn)增值稅	詢價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	FQB2N80TM	FAIRCHILD仙童	23+	D2PAK	10000	公司只做原裝正品	詢價(jià)
深圳市河鋒鑫科技有限公司	FQB2N80TM	Fairchild/ON	22+	TO2633 D2Pak (2 Leads + Tab) T	9000	原廠渠道,現(xiàn)貨配單	詢價(jià)
深圳市瑞卓芯科技有限公司	FQB2N80TM	FAIRCHILD/仙童	22+	D2-PAKTO-263	18000	原裝正品	詢價(jià)
深圳市金芯世紀(jì)電子有限公司	FQB2N80TM	FAIRCHILD/仙童	22+	SOT-263	100000	代理渠道/只做原裝/可含稅	詢價(jià)
深圳市鵬順微電子科技有限公司	FQB2N80TM	ON Semiconductor	2022+	TO-263-3,D2Pak(2 引線 + 接片	38550	全新原裝支持表配單中國(guó)著名電子元器件獨(dú)立分銷	詢價(jià)
深圳市旺財(cái)半導(dǎo)體有限公司	FQB2N80TM	Fairchild	23+		33500		詢價(jià)

更多FQB2N80TM供應(yīng)商更新時(shí)間2024-11-7 17:30:00

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