訂購數(shù)量 | 價格 |
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1+ |
首頁>FGB20N60SFD>芯片詳情
FGB20N60SFD_ONSEMI/安森美半導體_IGBT 晶體管 600V 20A Field Stop深圳良洲科技
- 詳細信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
FGB20N60SFD
- 功能描述:
IGBT 晶體管 600V 20A Field Stop
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集電極—發(fā)射極最大電壓
- VCEO:
650 V
- 集電極—射極飽和電壓:
2.3 V
- 柵極/發(fā)射極最大電壓:
20 V 在25
- C的連續(xù)集電極電流:
150 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
187 W
- 封裝/箱體:
TO-247
- 封裝:
Tube
供應商
- 企業(yè):
深圳良洲科技有限公司
- 商鋪:
- 聯(lián)系人:
楊夢琪
- 手機:
19128244554
- 詢價:
- 電話:
0755-21010605
- 地址:
深圳市福田區(qū)華強北街道華航社區(qū)華強北路1005、1007、1015號華強電子世界2號樓2層22C081
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