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F630

9A200VN-channelEnhancementModePowerMOSFET

1Description TheseN-channelEnhancedVDMOSFETs,isobtainedby theself-alignedplanartechnologywhichreducethe conductionloss,improveswitchingperformanceand enhancetheavalancheenergy.Whichaccordswiththe RoHSstandard. 2Features ●FastSwitching ●LowONResistance(Rdso

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司

FF630

FFBS88Centreboltedtags

COOPER

COOPER

FF630

CircuitProtectionSolutionsLowVoltageFuseLinksCatalogue

COOPER

COOPER

FG630

FGBS88Centreboltedtagsfuselinks

COOPER

COOPER

FG630

CircuitProtectionSolutionsLowVoltageFuseLinksCatalogue

COOPER

COOPER

FGM-630PGSR

SensingelementGauge

FUJIKURAFujikura Ltd.

富士康(中國(guó)) 公司

FM630-T

ChipSchottkyBarrierDiodes-Siliconepitaxialplanertype

Features PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. Forsurfacemountedapplications. ExceedsenvironmentalstandardsofMIL-S-19500/228 Lowleakagecurrent.

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

FPN630

PNPLowSaturationTransistor

PNPLowSaturationTransistor Thesedevicesaredesignedforhighcurrentgainandlow saturationvoltagewithcollectorcurrentsupto3.0Acontinuous. SourcedfromProcessPC.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FPN630A

PNPLowSaturationTransistor

PNPLowSaturationTransistor Thesedevicesaredesignedforhighcurrentgainandlow saturationvoltagewithcollectorcurrentsupto3.0Acontinuous. SourcedfromProcessPC.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FPT630

MiniatureCeramicSiliconPhototransistors

GeneralDescription TheFPT610andFPT630areminiature phototransistorswithexceptionallystable characteristics.Theyutilizeaceramiccasewith transparentresinencapsulation.Thespectral response,extendingfrom400to1100nm,is compatiblewithdaylight,tungstenandgallium arsen

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB630

200VN-ChannelMOSFET

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD630

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD630

200VLOGICN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD630TF

N-channelEnhancementModePowerMOSFET

Features ?VDS=200V,ID=8A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FQD630TM

200VLOGICN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD630TM

N-channelEnhancementModePowerMOSFET

Features ?VDS=200V,ID=8A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FQI630

200VN-ChannelMOSFET

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP630

200VN-ChannelMOSFET

Features ?9A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical19nC) ?LowCrss(typical35pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP630

200VN-ChannelMOSFET

Features ?9A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical19nC) ?LowCrss(typical35pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP630TSTU

200VN-ChannelMOSFET

Features ?9A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical19nC) ?LowCrss(typical35pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    ETF-630MA

  • 制造商:

    Cooper Bussmann

  • 功能描述:

    Fuse Micro 0.63A 250V Slow Blow 2-Pin Radial Through Hole

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CITC/竹懋
23+
ITO-220AC
85000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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富士
10+
主營(yíng)模塊
1000
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FUJI
23+
模塊
595
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FUJI
23+
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355
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FUJI
23+
NA
19960
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富士電機(jī)|FujiElectric
21+
模塊
12588
原裝正品,一級(jí)品牌代理
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FUJI
專業(yè)模塊
MODULE
8513
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FUJI
2018+
module
6000
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型號(hào)(1單元600V)G
2023+
80000
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FUJI
2020+
模塊
16800
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更多ETF-630MA供應(yīng)商 更新時(shí)間2024-11-17 9:29:00