F630中文資料東海半導體數(shù)據(jù)手冊PDF規(guī)格書

1 Description

These N-channel Enhanced VDMOSFETs, is obtained by

the self-aligned planar technology which reduce the

conduction loss, improve switching performance and

enhance the avalanche energy. Which accords with the

RoHS standard.

2 Features

● Fast Switching

● Low ON Resistance(Rdson≤0.4Ω)

● Low Gate Charge(Typical Data:22nC)

● Low Reverse Transfer Capacitances(Typical:22pF)

● 100 Single Pulse Avalanche Energy Test

● 100 ΔVDS Test

3 Applications

● High efficiency switch mode power supplies.

● Electronic lamp ballasts based on half bridge.

● UPS

● Inverter