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ET359

BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

EVAL-ADXL359Z

LowNoise,LowDrift,LowPower3-AxisMEMSAccelerometer

GENERALDESCRIPTION ThedigitaloutputADXL3591isalownoisedensity,low0goffset drift,lowpower,3-axismicroelectromechanicalsystem(MEMS) accelerometerwithselectablemeasurementranges.TheADXL359 supportsthe±10g,±20g,and±40granges. TheADXL359offersindustryleadingn

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

EXB359

FUJIBASEDRIVEMODULE

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

F-359XP

POWERTRANSFORMERPCMountDualPrimary

TRIAD

TRIAD MAGNETICS

FDN359

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandbatte

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDN359A

N-Channel30V(D-S)MOSFET

Features VDS(V)=27V RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

FDN359A

N-Channel30V(D-S)MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproduced usingadvancedPowerTrenchprocessthathasbeen especiallytailoredtominimizeon-stateresistance andyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand batterypoweredapplicatio

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDN359AN

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandbatte

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDN359AN

N-Channel30V(D-S)MOSFET

Features VDS(V)=27V RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

FDN359AN

N-Channel30V(D-S)MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproduced usingadvancedPowerTrenchprocessthathasbeen especiallytailoredtominimizeon-stateresistance andyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand batterypoweredapplicatio

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDN359B

N-Channel30V(D-S)MOSFET

Features VDS(V)=30V RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

FDN359B

N-Channel30V(D-S)MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproduced usingprocessthathasbeenespeciallytailoredto minimizeon-stateresistanceandyetmaintain superiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand batterypoweredapplicationswherelowin-line

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDN359BN

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchild’sSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandba

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDN359BN

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchild’sSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandba

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDN359BN

N-Channel30V(D-S)MOSFET

Features VDS(V)=30V RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

FDN359BN

N-Channel30V(D-S)MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproduced usingprocessthathasbeenespeciallytailoredto minimizeon-stateresistanceandyetmaintain superiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand batterypoweredapplicationswherelowin-line

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FW359

FW359

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

GL359

PNPSILICONPLANARHIGHCURRENTTRANSISTOR

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GL359

PNPSILICONPLANARHIGHCURRENTTRANSISTOR

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

GSC-359

Two-PieceGroundingConnectorsforShieldedandCoaxialCable

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

晶體管資料

  • 型號(hào):

    ET359

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    開(kāi)關(guān)管 (S)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    200V

  • 最大電流允許值:

    8A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    BUX18,TE13006,2N6928,

  • 最大耗散功率:

    100W

  • 放大倍數(shù):

  • 圖片代號(hào):

    B-53

  • vtest:

    200

  • htest:

    999900

  • atest:

    8

  • wtest:

    100

詳細(xì)參數(shù)

  • 型號(hào):

    ET359

  • 功能描述:

    TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 8A I(C) | TO-247VAR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
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100
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模塊
600
專營(yíng)模塊,繼電器,公司原裝現(xiàn)貨
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ETEK
23+
SOP-8
50000
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23+
NA/
4255
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票
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ETEK
23+
SSOP48
50000
全新原裝正品現(xiàn)貨,支持訂貨
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ETEK
22+
SSOP48
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
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ETEK
SSOP48
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
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ETEK
22+
SSOP48
50000
只做原裝假一罰十,歡迎咨詢
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0815+
SSOP48
374
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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9866
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更多ET359供應(yīng)商 更新時(shí)間2025-1-5 11:04:00