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FDN359AN

N-Channel Logic Level PowerTrenchTM MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandbatte

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDN359AN

N-Channel 30 V (D-S) MOSFET

Features VDS(V)=27V RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

FDN359AN

N-Channel 30 V (D-S) MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproduced usingadvancedPowerTrenchprocessthathasbeen especiallytailoredtominimizeon-stateresistance andyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand batterypoweredapplicatio

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDN359B

N-Channel30V(D-S)MOSFET

Features VDS(V)=30V RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

FDN359B

N-Channel30V(D-S)MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproduced usingprocessthathasbeenespeciallytailoredto minimizeon-stateresistanceandyetmaintain superiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand batterypoweredapplicationswherelowin-line

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDN359BN

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchild’sSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandba

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDN359BN

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchild’sSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandba

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDN359BN

N-Channel30V(D-S)MOSFET

Features VDS(V)=30V RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

FDN359BN

N-Channel30V(D-S)MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproduced usingprocessthathasbeenespeciallytailoredto minimizeon-stateresistanceandyetmaintain superiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand batterypoweredapplicationswherelowin-line

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FW359

FW359

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

GL359

PNPSILICONPLANARHIGHCURRENTTRANSISTOR

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

GL359

PNPSILICONPLANARHIGHCURRENTTRANSISTOR

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GSC-359

Two-PieceGroundingConnectorsforShieldedandCoaxialCable

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

GSR-359

Two-PieceGroundingConnectorsforShieldedandCoaxialCable

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

HVC359

VariableCapacitanceDiodeforVCXO

Features ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVC359

VariableCapacitanceDiodeforVCXO

FEATURES ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

HVC359

VariableCapacitanceDiodeforVCO

Features ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVD359

VariableCapacitanceDiodeforVCXO

Features ●HighcapacitanceratioandgoodC-Vlinearity. ●Tobeusableatlowvoltage. ●SupersmallFlatLeadPackage(SFP)issuitableforsurfacemountdesign.

ZHAOXINGWEI

Zhaoxingwei Electronics ., Ltd

HVD359

VariableCapacitanceDiodeforVCXO

Features ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVD359

VariableCapacitanceDiodeforVCO

Features ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?SupersmallFlatLeadPackage(SFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    FDN359AN

  • 功能描述:

    MOSFET SSOT-3 N-CH 30V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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onsemi
24+
SOT-23-3
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
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ON/安森美
2019+
SOT-23
78550
原廠渠道 可含稅出貨
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ON/安森美
23+
SOT23
26177
誠心經(jīng)營 原盒原標(biāo) 正品現(xiàn)貨 價(jià)格美麗假一罰十
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ON
23+
SOT23
9000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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ON/安森美
24+
SOT-23
15
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UMW 友臺(tái)
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SOT-23
18000
原裝正品,實(shí)單請(qǐng)聯(lián)系
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ON/安森美
22+
SOT23
18000
原裝正品
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仙童
24+
NA
6800
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ON/安森美
2021+
SSOT-3
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
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ON
23+
SSOT-3
8900
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更多FDN359AN供應(yīng)商 更新時(shí)間2024-12-22 14:13:00