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首頁 >FDN359B>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
FDN359B	文件：423.52 Kbytes Page：6 Pages	N-Channel 30 V (D-S) MOSFET Features VDS(V)=30V RDS(ON)	UMWUMW Rightway Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司(簡稱UMW?)	UMW
FDN359B	文件：331.27 Kbytes Page：6 Pages	N-Channel 30 V (D-S) MOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFETisproduced usingprocessthathasbeenespeciallytailoredto minimizeon-stateresistanceandyetmaintain superiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand batterypoweredapplicationswherelowin-line	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導體	EVVOSEMI
FDN359BN	文件：96.5 Kbytes Page：6 Pages	N-Channel Logic Level PowerTrench TM MOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchild’sSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandba	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FDN359BN	文件：106.63 Kbytes Page：6 Pages	N-Channel Logic Level PowerTrenchTM MOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchild’sSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandba	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FDN359BN	文件：423.52 Kbytes Page：6 Pages	N-Channel 30 V (D-S) MOSFET Features VDS(V)=30V RDS(ON)	UMWUMW Rightway Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司(簡稱UMW?)	UMW
FDN359BN	文件：331.27 Kbytes Page：6 Pages	N-Channel 30 V (D-S) MOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFETisproduced usingprocessthathasbeenespeciallytailoredto minimizeon-stateresistanceandyetmaintain superiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand batterypoweredapplicationswherelowin-line	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導體	EVVOSEMI
FDN359BN-F095	文件：106.63 Kbytes Page：6 Pages	N-Channel Logic Level PowerTrenchTM MOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchild’sSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandba	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FW359	文件：74.14 Kbytes Page：6 Pages	FW359	SANYOSanyo 三洋三洋電機株式會社	SANYO
GL359	文件：334.32 Kbytes Page：2 Pages	PNPSILICONPLANARHIGHCURRENTTRANSISTOR	ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司	ETL
GL359	文件：330.93 Kbytes Page：2 Pages	PNPSILICONPLANARHIGHCURRENTTRANSISTOR	GTM 勤益投資控股股份有限公司	GTM
GSC-359	文件：110.97 Kbytes Page：3 Pages	Two-PieceGroundingConnectorsforShieldedandCoaxialCable	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2
GSR-359	文件：110.97 Kbytes Page：3 Pages	Two-PieceGroundingConnectorsforShieldedandCoaxialCable	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2
HVC359	文件：23.4 Kbytes Page：5 Pages	VariableCapacitanceDiodeforVCXO Features ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
HVC359	文件：33.54 Kbytes Page：2 Pages	VariableCapacitanceDiodeforVCXO FEATURES ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.	LRCLeshan Radio Company 樂山無線電樂山無線電股份有限公司	LRC
HVC359	文件：138.74 Kbytes Page：5 Pages	VariableCapacitanceDiodeforVCO Features ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
HVD359	文件：44.7 Kbytes Page：1 Pages	VariableCapacitanceDiodeforVCXO Features ●HighcapacitanceratioandgoodC-Vlinearity. ●Tobeusableatlowvoltage. ●SupersmallFlatLeadPackage(SFP)issuitableforsurfacemountdesign.	ZHAOXINGWEIZhaoxingwei Electronics ., Ltd 兆興威深圳市兆興威電子有限公司	ZHAOXINGWEI
HVD359	文件：34.73 Kbytes Page：5 Pages	VariableCapacitanceDiodeforVCXO Features ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
HVD359	文件：52.25 Kbytes Page：5 Pages	VariableCapacitanceDiodeforVCO Features ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?SupersmallFlatLeadPackage(SFP)issuitableforsurfacemountdesign.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
HVD359	文件：33.76 Kbytes Page：1 Pages	VariableCapacitanceDiodeforVCXO Features ●HighcapacitanceratioandgoodC-Vlinearity. ●Tobeusableatlowvoltage. ●SupersmallFlatLeadPackage(SFP)issuitableforsurfacemountdesign.	KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司	KEXIN
HVU359	文件：25.16 Kbytes Page：5 Pages	VariableCapacitanceDiodeforVCXO Features ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?UltrasmallResinPackage(URP)issuitableforsurfacemountdesign.	HitachiHitachi Semiconductor 日立日立公司	Hitachi

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詳細參數(shù)

型號：
FDN359B
功能描述：
MOSFET 30V N-Channel PowerTrench MOSFET
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導通）：
0.014 Ohms
配置：
Single
安裝風格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市一線半導體有限公司	FDN359BN	Fairchild	24+	SSOT-3	7500		詢價
齊創(chuàng)科技(上海,北京,青島)有限公司	FDN359BN	原廠	23+	SOT-23	20000	原裝正品,假一罰十	詢價
深圳市卓越微芯電子有限公司	FDN359BN	FSC	2020+	SOT23-3	2207	百分百原裝正品真實公司現(xiàn)貨庫存本公司只做原裝可	詢價
深圳市博浩通科技有限公司	FDN359BNCT	Fairchild	23+	SuperSOT?-3	7750	全新原裝優(yōu)勢	詢價
千層芯半導體(深圳)有限公司	FDN359BN-NL	Fairchild	17+	SOT-23	1000	原裝正品現(xiàn)貨	詢價
深圳市凌旭科技有限公司	FDN359BN	FAIRCHILD	2016+	SOT23-3	6000	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價
深圳市亞泰盈科電子有限公司	FDN359BN	FAIRCHILD		SOT23-3	10265	提供BOM表配單只做原裝貨值得信賴	詢價
深圳市永貝爾科技有限公司	FDN359BN	FAIRCHILD	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳市達恩科技有限公司	FDN359BN	ONSemiconductor	18+	NA	3000	進口原裝正品優(yōu)勢供應QQ3171516190	詢價
深圳市科恒偉業(yè)電子有限公司	FDN359BN	FSC	2018+	SOT23	11256	只做進口原裝正品!假一賠十!	詢價

更多FDN359B供應商更新時間2024-10-26 16:30:00

詳細參數(shù)

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