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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
CEU02N7	文件：122.66 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■700V,1.6A,RDS(ON)=6.6?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU02N7G	文件：403.3 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■700V,1.6A,RDS(ON)=6.75Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU02N7G	文件：614.75 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V,1.6A,RDS(ON)=6.75W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU02N7G-1	文件：671.91 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■720V,1.6A,RDS(ON)=6.75Ω@VGS=10V. 750V@Tc=150°C ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU02N7G-1	文件：619.27 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 720V,1.6A,RDS(ON)=6.75W@VGS=10V. 750V@Tc=150C SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU02N7G	文件：892.2 Kbytes Page：5 Pages	N-Channel MOSFET uses advanced trench technology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司	DOINGTER
CEB02N7	文件：134.8 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB02N7G	文件：403.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB02N7G	文件：625.85 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED02N7	文件：122.66 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■700V,1.6A,RDS(ON)=6.6?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED02N7G	文件：614.75 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 700V,1.6A,RDS(ON)=6.75W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED02N7G	文件：403.3 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■700V,1.6A,RDS(ON)=6.75Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEF02N7	文件：134.8 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEF02N7G	文件：625.85 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF02N7G	文件：403.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEI02N7	文件：134.8 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEK02N7G	文件：674.19 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 700V,0.4A,RDS(ON)=6.75W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TO-92(Bulk)&TO-92(Ammopack)package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP02N7	文件：134.8 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP02N7G	文件：625.85 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP02N7G	文件：403.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET

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詳細(xì)參數(shù)

型號(hào)：
CEU02N7
制造商：
CET
制造商全稱：
Chino-Excel Technology
功能描述：
N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市宇集芯電子有限公司	CEU02N7	CET	24+	TO-252	90000	進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理	詢價(jià)
瀚佳科技(深圳)有限公司	CEU02N7	CET	24+	TO-252	16800	絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?	詢價(jià)
深圳市永貝爾科技有限公司	CEU02N7	CET	23+	原廠原包	19960	只做進(jìn)口原裝終端工廠免費(fèi)送樣	詢價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	CEU02N7	C	23+	TO-251AA	10000	公司只做原裝正品	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	CEU02N7	CET/華瑞	23+	TO-252	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	CEU02N7	CET/華瑞	23+	TO-252	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市河鋒鑫科技有限公司	CEU02N7	C	22+	TO-251AA	6000	十年配單,只做原裝	詢價(jià)
深圳市匯萊威科技有限公司	CEU02N7		CET	TO-252	68900	原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	CEU02N7	C	23+	TO-251AA	6000	原裝正品，支持實(shí)單	詢價(jià)
深圳廊盛科技有限公司	CEU02N7	CET/華瑞	22+	TO-252	50000	只做原裝假一罰十,歡迎咨詢	詢價(jià)

更多CEU02N7供應(yīng)商更新時(shí)間2024-12-28 15:43:00

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