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CEU05P03

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-15A,RDS(ON)=70m?@VGS=-10V. RDS(ON)=120m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU05P03

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-15A,RDS(ON)=70mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=120mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB05P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-18A,RDS(ON)=70mW@VGS=-10V. RDS(ON)=120mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED05P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-15A,RDS(ON)=70mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=120mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED05P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-15A,RDS(ON)=70m?@VGS=-10V. RDS(ON)=120m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP05P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-18A,RDS(ON)=70mW@VGS=-10V. RDS(ON)=120mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP05P03

SingleP-ChannelEnhancementModeMOSFET

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEZ05P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-93A,RDS(ON)=5.2mW@VGS=-10V. RDS(ON)=8mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號：

    CEU05P03

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    P-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
SR
23+
TO-252-2
5000
原裝正品,假一罰十
 詢價
CET
24+
TO-252
90000
進(jìn)口原裝現(xiàn)貨假一罰十價格合理
 詢價
CET
2020+
SOT-252
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
CET
24+
TO-252
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
CET
21+
SOT-252
1313
原裝現(xiàn)貨假一賠十
 詢價
VBSEMI/臺灣微碧
23+
TO-252-2
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
CET
06+
SOT-252
1313
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
CET
23+
TO-252
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
CET
23+
TO-252
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
CET
23+
SOT-252
10000
原裝正品現(xiàn)貨
 詢價
更多CEU05P03供應(yīng)商 更新時間2025-3-22 15:36:00

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