首頁 >CEF01N6G>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

CEF01N6G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

BES01N6

InductiveSensors

BES517-398-NO-C-05 Basicfeatures Approval/ConformityCE UKCA cULus WEEE BasicstandardIEC60947-5-2

BalluffBalluff Korea Ltd.

巴魯夫巴魯夫集團

CEB01N6

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB01N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED01N6

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,0.9A,RDS(ON)=15?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED01N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,1.1A,RDS(ON)=12W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED01N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■600V,1A,RDS(ON)=9.3Ω@VGS=10V. ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF01N6

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEI01N6

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEK01N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■600V,1A,RDS(ON)=9.3Ω@VGS=10V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TO-92(Bulk)&TO-92(Ammopack)package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEK01N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,1A,RDS(ON)=9.3W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TO-92(Bulk)&TO-92(Ammopack)package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP01N6

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP01N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU01N6

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,0.9A,RDS(ON)=15?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU01N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,1.1A,RDS(ON)=12W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU01N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■600V,1A,RDS(ON)=9.3Ω@VGS=10V. ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細參數(shù)

  • 型號:

    CEF01N6G

  • 制造商:

    CET

  • 制造商全稱:

    Chino-Excel Technology

  • 功能描述:

    N-Channel Enhancement Mode Field Effect Transistor

供應商型號品牌批號封裝庫存備注價格
CET
TO-220
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
詢價
JINGDAO/晶導微
23+
SOD-123FL
69820
終端可以免費供樣,支持BOM配單!
詢價
CET/華瑞
22+
TO-220
20000
保證原裝正品,假一陪十
詢價
CET/華瑞
23+
TO-220
10000
公司只做原裝正品
詢價
CET/華瑞
23+
TO-TO-220
12300
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
CET/華瑞
22+
TO-220
100000
代理渠道/只做原裝/可含稅
詢價
CET
24+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
CET
23+
TO220/3
7000
絕對全新原裝!100%保質量特價!請放心訂購!
詢價
CET
24+
TO2203
1855
詢價
CET
24+
TO-220F
5000
只做原裝公司現(xiàn)貨
詢價
更多CEF01N6G供應商 更新時間2025-1-7 14:00:00