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CEB20N65S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB20N65SA

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB20N65SF

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. Fastreverserecoverytime. Drivecircuitscanbesimple.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CECS20N65LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,19A,RDS(ON)=180mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CECS20N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,19A,RDS(ON)=180mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF20N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF20N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF20N65SF

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. Fastreverserecoverytime. Drivecircuitscanbesimple.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP20N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP20N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP20N65SF

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. Fastreverserecoverytime. Drivecircuitscanbesimple.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEW20N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 700V@TJmax,20A,RDS(ON)=0.18W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-247package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FIR20N65AFG

LowIntrinsicCapacitances

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR20N65FG

N-ChannelPowerMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

HM20N65F

thesiliconN-channelEnhancedVDMOSFETs

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HMG20N65F

HighEfficiencyforMotorControl.

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HRH20N65ANF

650VN-ChannelPlanarMOSFET

Features RDSON≤0.42Ω@Vgs=10V,Id=10A UltraLowgateCharge(typical73nC) LowCrss(typical12pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)(P

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH20N65ANP

650VN-ChannelPlanarMOSFET

Features RDSON≤0.42Ω@Vgs=10V,Id=10A UltraLowgateCharge(typical73nC) LowCrss(typical12pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)(P

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH20N65ANV

650VN-ChannelPlanarMOSFET

Features RDSON≤0.42Ω@Vgs=10V,Id=10A UltraLowgateCharge(typical73nC) LowCrss(typical12pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)(P

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH20N65ANW

650VN-ChannelPlanarMOSFET

Features RDSON≤0.42Ω@Vgs=10V,Id=10A UltraLowgateCharge(typical73nC) LowCrss(typical12pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)(P

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CET
12+
TO-263
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
詢價(jià)
SR
23+
T0-263
5000
原裝正品,假一罰十
詢價(jià)
CET
24+
TO-263
90000
進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理
詢價(jià)
CET
20+
TO-263
36900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
詢價(jià)
CET
2020+
TO-263
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
CET
2020+
TO-263
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
詢價(jià)
CET/華瑞
21+
TO-263
30000
只做正品原裝現(xiàn)貨
詢價(jià)
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
詢價(jià)
CET
21+
TO-263
9
原裝現(xiàn)貨假一賠十
詢價(jià)
CET
22+
TO-263
32350
原裝正品 假一罰十 公司現(xiàn)貨
詢價(jià)
更多CEB20N65S供應(yīng)商 更新時(shí)間2024-11-17 11:04:00