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CED02N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,1.3A,RDS(ON)=8.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED02N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,1.3A,RDS(ON)=8?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED02N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■600V,2A,RDS(ON)=5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED02N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,2A,RDS(ON)=5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEE02N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,1.3A,RDS(ON)=8.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-126package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEE02N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■600V,1.3A,RDS(ON)=8.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-126package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEE02N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■600V,2.0A,RDS(ON)=5.0Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-126package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEE02N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,2.0A,RDS(ON)=5.0W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-126package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF02N6

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ???????■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF02N6

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細參數(shù)

  • 型號：

    CEB02N6

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
CET
24+
50000
詢價
CET
24+
TO-263
90000
進口原裝現(xiàn)貨假一罰十價格合理
 詢價
CET
22+
TO-263
17636
原裝正品現(xiàn)貨,可開13點稅
 詢價
ON/安森美
23+
TO-252
69820
終端可以免費供樣,支持BOM配單!
 詢價
CET
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
CET
22+
TO-263
6000
十年配單,只做原裝
 詢價
CET
23+
TO-263
6000
原裝正品，支持實單
 詢價
CET
23+
TO-263
4810
正品原裝貨價格低
 詢價
CET
23+
TO-263
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
CET
23+
TO-263
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
更多CEB02N6供應(yīng)商 更新時間2025-4-26 14:30:00

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