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BLF6G10L

260 W LDMOS power transistor for base station applications

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF6G10L(S)-260PRN

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BLF6G10L-260PBM

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BLF6G10L-260PRN

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BLF6G10L-40BRN

Power LDMOS transistor

Generaldescription 40WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto1GHz. Featuresandbenefits ■Typical2-carrierW-CDMAperformanceatfrequenciesof791MHzand821MHz,asupplyvoltageof28VandanIDqof390mA: ◆Averageoutputpower=2.

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BLF6G10L-40BRN

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BLF6G10LS-135R

Power LDMOS transistor

Generaldescription 135WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom800MHzto1000MHz. Features ■Typical2-carrierW-CDMAperformanceatfrequenciesof869MHzand894MHz,asupplyvoltageof28VandanIDqof950mA: ◆Averageoutputpower=26.5W

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BLF6G10LS-135RN

Power LDMOS transistor

Generaldescription 135WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto1000MHz. Features ■Typical2-carrierW-CDMAperformanceatfrequenciesof869MHzand894MHz,asupplyvoltageof28VandanIDqof950mA: ◆Averageoutputpower=26.5W

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BLF6G10LS-135RN

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BLF6G10LS-160RN

Power LDMOS transistor

Generaldescription 160WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto1000MHz. Features Typical2-carrierW-CDMAperformanceatfrequenciesof920MHzand960MHz,asupplyvoltageof32VandanIDqof1200mA: Averageoutputpower=32W

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BLF6G10LS-160RN

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BLF6G10LS-200

Power LDMOS transistor

Generaldescription 200WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom800MHzto1000MHz. Features ■Typical2-carrierW-CDMAperformanceatfrequenciesof869MHzand894MHz,asupplyvoltageof28VandanIDqof1400mA: ◆Averageoutputpower=40W

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BLF6G10LS-200R

Power LDMOS transistor

Generaldescription 200WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom800MHzto1000MHz. Features ■Typical2-carrierW-CDMAperformanceatfrequenciesof869MHzand894MHz,asupplyvoltageof28VandanIDqof1400mA: ◆Averageoutputpower=40W

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BLF6G10LS-200RN

Power LDMOS transistor

Generaldescription 200WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto1000MHz. Features ■Typical2-carrierW-CDMAperformanceatfrequenciesof869MHzand894MHz,asupplyvoltageof28VandanIDqof1400mA: ◆Averageoutputpower=40W

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BLF6G10LS-200RN

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BLF6G10LS-260PRN

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BLF6G10L-260PRN

260 W LDMOS power transistor for base station applications

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF6G10L-260PRN_15

Power LDMOS transistor

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF6G10L-40BRN_15

Power LDMOS transistor

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF6G10LS-260PRN

260 W LDMOS power transistor for base station applications

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細參數(shù)

  • 型號:

    BLF6G10L

  • 功能描述:

    射頻MOSFET電源晶體管 PWR LDMOS TRANSISTOR

  • RoHS:

  • 制造商:

    Freescale Semiconductor

  • 配置:

    Single

  • 頻率:

    1800 MHz to 2000 MHz

  • 增益:

    27 dB

  • 輸出功率:

    100 W

  • 封裝/箱體:

    NI-780-4

  • 封裝:

    Tray

供應商型號品牌批號封裝庫存備注價格
NXP
17+
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6200
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NXP
2020+
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51
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PHILIPS
23+
高頻管
1520
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NXP
23+
SMD
7635
全新原裝優(yōu)勢
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NXP
2339+
N/A
13523
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
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原廠正品
23+
高頻管
1000
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NXP
19+
SOT502B
66211
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NXP
24+
SMD
2789
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NXP
24+
SMD
1680
NXP專營品牌進口原裝現(xiàn)貨假一賠十
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NXP
23+
SOT502B
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
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更多BLF6G10L供應商 更新時間2025-1-4 16:00:00