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BLF888

UHFpowerLDMOStransistor

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF888

UHFpowerLDMOStransistor

Generaldescription A500WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Thetransistorisoptimizedfordigitalapplicationsandcandeliver110WaverageDVB-TbroadbandoverthefullUHFbandfrom470MHzto860MHz.Theexcellentruggednessof

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF888

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF888A

UHFpowerLDMOStransistor

Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitterapplications. Featuresandbenefits ■Excellentruggedness(VSWR≥40:1througha

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF888A

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF888A

UHFpowerLDMOStransistor

Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits ?Excellentruggedness(VSWR?40:1through

AmpleonAmpleon USA Inc.

安譜隆

BLF888A(S)

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF888AS

UHFpowerLDMOStransistor

Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitterapplications. Featuresandbenefits ■Excellentruggedness(VSWR≥40:1througha

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF888AS

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF888AS

UHFpowerLDMOStransistor

Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits ?Excellentruggedness(VSWR?40:1through

AmpleonAmpleon USA Inc.

安譜隆

詳細(xì)參數(shù)

  • 型號(hào):

    BGY888,112

  • 功能描述:

    射頻放大器 BULK CATV-MOD

  • RoHS:

  • 制造商:

    Skyworks Solutions, Inc.

  • 類(lèi)型:

    Low Noise Amplifier

  • 工作頻率:

    2.3 GHz to 2.8 GHz

  • P1dB:

    18.5 dBm

  • 輸出截獲點(diǎn):

    37.5 dBm

  • 功率增益類(lèi)型:

    32 dB

  • 噪聲系數(shù):

    0.85 dB

  • 工作電源電壓:

    5 V

  • 電源電流:

    125 mA

  • 測(cè)試頻率:

    2.6 GHz

  • 最大工作溫度:

    + 85 C

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    QFN-16

  • 封裝:

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NXP
24+
700
詢(xún)價(jià)
NXP USA Inc.
24+
SOT115J
53200
一級(jí)代理/放心采購(gòu)
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NXP
22+
NA
45000
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NXP/恩智浦
2023+
8700
原裝現(xiàn)貨
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NXP/恩智浦
24+
DIP7
60000
詢(xún)價(jià)
PHILIPS
23+
195
詢(xún)價(jià)
NXP
20+
SOT115J
1001
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NXP Semiconductors
22+
NA
500000
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂(yōu)
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NXP USA Inc.
25+
SOT-115J
9350
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
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NXP
23+
高頻模塊
3100
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更多BGY888,112供應(yīng)商 更新時(shí)間2025-4-28 10:50:00