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APT8030JN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT8030JVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

ADPOW

Advanced Power Technology

APT8030JVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

ADPOW

Advanced Power Technology

APT8030JVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

ADPOW

Advanced Power Technology

APT8030LVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

ADPOW

Advanced Power Technology

APT8030LVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

ADPOW

Advanced Power Technology

APT8030LVFR

POWERMOSV

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT8030LVFR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT8030LVFRG

POWERMOSV

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT8030LVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitchi

ADPOW

Advanced Power Technology

APT8030LVR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=27A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

AT8030

2X15W2.0channelanti-breakingClassDamplifier

YONGFUKANGShenzhenshi YONGFUKANG Technology co.,LTD

永???/span>深圳市永??悼萍加邢薰?/p>

AT8030TT

2X15W2.0channelanti-breakingClassDamplifier

YONGFUKANGShenzhenshi YONGFUKANG Technology co.,LTD

永???/span>深圳市永??悼萍加邢薰?/p>

BF8030

DCBlowerFan80x80x30mm

COOLCOXCoolCox Limited All rights reserved.

奇凌電子東莞市奇凌電子科技有限公司

C8030

RG59/UTypeCoaxial&2/C18AWGSiameseCCTV-PlenumCable

GENERALGeneral Electric

通用電氣公司美國通用電氣公司

CEB8030

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,75A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB8030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,75A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP8030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,75A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM8030LANPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT75Ampere FEATURE ???????*Smallflatpackage.(D2PAK) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CZ8030

RFAMPLIFIER

SPECTRUM

Spectrum Instrumentation GmbH

詳細參數(shù)

  • 型號:

    APT8030DN

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | CHIP

供應(yīng)商型號品牌批號封裝庫存備注價格
MICROCHIP/微芯
24+
SMT
18000
誠以養(yǎng)德,用芯做事,全新原裝原盒原標出貨。
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APT
23+
模塊
3562
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APT
23+
模塊
360
全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢!
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APT
23+
模塊
1000
原裝正品,假一罰十
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APT
24+
模塊
3500
原裝現(xiàn)貨,可開13%稅票
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APT
22+
原廠原封
8200
原裝現(xiàn)貨庫存.價格優(yōu)勢!!
詢價
aptchip(愛普特微)
21+
模塊
12588
原裝正品,一級品牌代理
詢價
APT
專業(yè)模塊
MODULE
8513
模塊原裝主營-可開原型號增稅票
詢價
APT
2018+
module
6000
全新原裝正品現(xiàn)貨,假一賠佰
詢價
APT
2023+
MODULE
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
更多APT8030DN供應(yīng)商 更新時間2024-7-4 10:35:00