首頁(yè) >APT8030LVFR>規(guī)格書(shū)列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
APT8030LVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery | ADPOW Advanced Power Technology | ADPOW | |
APT8030LVFR | POWER MOS V PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
APT8030LVFR | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
APT8030LVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | ADPOW Advanced Power Technology | ADPOW | |
POWER MOS V PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitchi | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=27A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
2X15W2.0channelanti-breakingClassDamplifier | YONGFUKANGShenzhenshi YONGFUKANG Technology co.,LTD 永???/span>深圳市永??悼萍加邢薰?/p> | YONGFUKANG | ||
2X15W2.0channelanti-breakingClassDamplifier | YONGFUKANGShenzhenshi YONGFUKANG Technology co.,LTD 永???/span>深圳市永福康科技有限公司 | YONGFUKANG |
詳細(xì)參數(shù)
- 型號(hào):
APT8030LVFR
- 制造商:
ADPOW
- 制造商全稱:
Advanced Power Technology
- 功能描述:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
APT |
15+ |
TO-264 |
11560 |
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng) |
詢價(jià) | ||
APT |
24+ |
8866 |
詢價(jià) | ||||
MICROSEMI |
23+ |
TO264 |
7635 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
APT |
23+ |
TO-3PL |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
MICROSEMI |
2020+ |
5000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | |||
APT |
22+ |
TO-264L |
8200 |
原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!! |
詢價(jià) | ||
APT |
23+ |
TO264 |
30 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
APT |
2020+ |
TO-264 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
APT |
24+ |
TO-3PL |
2050 |
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨 |
詢價(jià) | ||
APT |
22+ |
TO264 |
9852 |
只做原裝正品現(xiàn)貨,或訂貨假一賠十! |
詢價(jià) |
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