首頁(yè) >APT1001RBVFR>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
APT1001RBVFR | POWER MOS V FREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?AvalancheEner | ADPOW Advanced Power Technology | ADPOW | |
APT1001RBVFR | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVI?isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSVFREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?AvalancheEner | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching | ADPOW Advanced Power Technology | ADPOW | ||
100AvalancheTested PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
100AvalancheTested PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
GIGABITRJ45LANMAGNETIC | ABRACON Abracon Corporation | ABRACON | ||
10mmwideIP67&IP68LEDlightstrip | OPTOSUPPLY OptoSupply International | OPTOSUPPLY | ||
NPNSILICONRFPOWERTRANSISTOR DESCRIPTION: TheASI1001isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: ?PG=12dBmin.at1.0W/1,000MHz ?HermeticMicrostripPackage ?Omnigold?MetalizationSystem | ASI Advanced Semiconductor | ASI | ||
HighPowerFixedAttenuators(Radiatorbuilt-in) HighPowerFixedAttenuators(Radiatorbuilt-in) ■Features 1.SmallSizeandEconomical Berylliaisusedforthematerialoftheresistanceelementtoenabletheterminationtobeofsmallsizeandlowcost. 2.ConnectorsUsed Inthecouplingportion,theAT-1000SerieshasanSMAt | HIROSEHirose Electric Company 廣瀨日本廣瀨電機(jī)株式會(huì)社 | HIROSE | ||
PLLSynthesizerinSMDpackage | AXTALAdvanced XTAL Products advanced XTAL Products | AXTAL | ||
VCO-VoltageControlledOscillator | AXTALAdvanced XTAL Products advanced XTAL Products | AXTAL | ||
LowCost1x2Inch10WWideInputRangeDC/DCConverters | MPD MPD (Memory Protection Devices) | MPD | ||
EVERLIGHTELECTRONICECO.,LTD. | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
10W,5VDCInputCompact,DualOutputDC/DCConverters | MPD MPD (Memory Protection Devices) | MPD | ||
Compact1x2Inch10WWideInputRangeDC/DCConverters | MPD MPD (Memory Protection Devices) | MPD | ||
B1000RWSERIES | MPD MPD (Memory Protection Devices) | MPD | ||
BIG-FOOT-1001 | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 |
詳細(xì)參數(shù)
- 型號(hào):
APT1001RBVFR
- 制造商:
ADPOW
- 制造商全稱:
Advanced Power Technology
- 功能描述:
POWER MOS V FREDFET
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
APT |
24+ |
8866 |
詢價(jià) | ||||
APT |
22+ |
原廠原封 |
8200 |
原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!! |
詢價(jià) | ||
MICROSEMI |
三年內(nèi) |
1983 |
納立只做原裝正品13590203865 |
詢價(jià) | |||
APT |
24+ |
TO-247 |
564 |
詢價(jià) | |||
ADPOW |
23+ |
原廠原包 |
19960 |
只做進(jìn)口原裝 終端工廠免費(fèi)送樣 |
詢價(jià) | ||
APTMICROSEMI |
23+ |
TO-247B |
27682 |
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道??商峁┐罅繋?kù)存,詳 |
詢價(jià) | ||
APT |
22+ |
TO-247 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
Microchip |
21+ |
15000 |
只做原裝 |
詢價(jià) | |||
APT |
TO-3P |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
MICROCHIP |
22+ |
3 |
279 |
只做原裝,有掛就有貨。 |
詢價(jià) |
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