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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
APT1001RBVFR	文件：123.99 Kbytes Page：4 Pages	POWER MOS V FREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?AvalancheEner	ADPOW Advanced Power Technology	ADPOW
APT1001RBVFR	文件：371.87 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
APT1001RBVR	文件：68.19 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching	ADPOW Advanced Power Technology	ADPOW
APT1001RSLC	文件：35.76 Kbytes Page：2 Pages	PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVI?isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally	ADPOW Advanced Power Technology	ADPOW
APT1001RSVFR	文件：123.99 Kbytes Page：4 Pages	POWERMOSVFREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?AvalancheEner	ADPOW Advanced Power Technology	ADPOW
APT1001RSVR	文件：71.22 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching	ADPOW Advanced Power Technology	ADPOW
APT1001RSVR	文件：76 Kbytes Page：4 Pages	100AvalancheTested PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
APT1001RSVRG	文件：76 Kbytes Page：4 Pages	100AvalancheTested PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
ARJ-1001	文件：628.88 Kbytes Page：2 Pages	GIGABITRJ45LANMAGNETIC	ABRACON Abracon Corporation	ABRACON
ASH1001	文件：576.87 Kbytes Page：1 Pages	10mmwideIP67&IP68LEDlightstrip	OPTOSUPPLY OptoSupply International	OPTOSUPPLY
ASI1001	文件：18.25 Kbytes Page：1 Pages	NPNSILICONRFPOWERTRANSISTOR DESCRIPTION: TheASI1001isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: ?PG=12dBmin.at1.0W/1,000MHz ?HermeticMicrostripPackage ?Omnigold?MetalizationSystem	ASI Advanced Semiconductor	ASI
AT-1001	文件：48.95 Kbytes Page：2 Pages	HighPowerFixedAttenuators(Radiatorbuilt-in) HighPowerFixedAttenuators(Radiatorbuilt-in) ■Features 1.SmallSizeandEconomical Berylliaisusedforthematerialoftheresistanceelementtoenabletheterminationtobeofsmallsizeandlowcost. 2.ConnectorsUsed Inthecouplingportion,theAT-1000SerieshasanSMAt	HIROSEHirose Electric Company 廣瀨日本廣瀨電機(jī)株式會(huì)社	HIROSE
AXHS1001	文件：44.73 Kbytes Page：1 Pages	PLLSynthesizerinSMDpackage	AXTALAdvanced XTAL Products advanced XTAL Products	AXTAL
AXHV1001	文件：92.18 Kbytes Page：3 Pages	VCO-VoltageControlledOscillator	AXTALAdvanced XTAL Products advanced XTAL Products	AXTAL
B1001ERW	文件：200.59 Kbytes Page：2 Pages	LowCost1x2Inch10WWideInputRangeDC/DCConverters	MPD MPD (Memory Protection Devices)	MPD
B1001EWA	文件：158.11 Kbytes Page：5 Pages	EVERLIGHTELECTRONICECO.,LTD.	ETCList of Unclassifed Manufacturers 未分類制造商	ETC
B1001R	文件：69.34 Kbytes Page：2 Pages	10W,5VDCInputCompact,DualOutputDC/DCConverters	MPD MPD (Memory Protection Devices)	MPD
B1001RW	文件：74.07 Kbytes Page：2 Pages	Compact1x2Inch10WWideInputRangeDC/DCConverters	MPD MPD (Memory Protection Devices)	MPD
B1001RW	文件：187.96 Kbytes Page：2 Pages	B1000RWSERIES	MPD MPD (Memory Protection Devices)	MPD
BF-1001	文件：46.44 Kbytes Page：1 Pages	BIG-FOOT-1001	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2

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詳細(xì)參數(shù)

型號(hào)：
APT1001RBVFR
制造商：
ADPOW
制造商全稱：
Advanced Power Technology
功能描述：
POWER MOS V FREDFET

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	APT1001RBVFR	APT	24+		8866		詢價(jià)
深圳市壹芯創(chuàng)科技有限公司	APT1001RBVFR	APT	22+	原廠原封	8200	原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!!	詢價(jià)
深圳市納立科技有限公司	APT1001RBVFR	MICROSEMI	三年內(nèi)		1983	納立只做原裝正品13590203865	詢價(jià)
深圳市興燦科技有限公司	APT1001RBVFR	APT	24+	TO-247	564		詢價(jià)
深圳市永貝爾科技有限公司	APT1001RBVFR	ADPOW	23+	原廠原包	19960	只做進(jìn)口原裝終端工廠免費(fèi)送樣	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	APT1001RBVFR	APTMICROSEMI	23+	TO-247B	27682	原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳	詢價(jià)
深圳市勝彬電子有限公司	APT1001RBVFR	APT	22+	TO-247	8000	原裝正品支持實(shí)單	詢價(jià)
深圳市微納爾電子實(shí)業(yè)有限公司	APT1001RBVFRG	Microchip	21+		15000	只做原裝	詢價(jià)
深圳市匯萊威科技有限公司	APT1001RBVFRG		APT	TO-3P	68900	原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!	詢價(jià)
深圳市保之豐科技有限公司	APT1001RBVFRG	MICROCHIP	22+	3	279	只做原裝,有掛就有貨。	詢價(jià)

更多APT1001RBVFR供應(yīng)商更新時(shí)間2024-10-26 16:30:00

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