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APT1001R3BN

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1001R3BN

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT1001R3AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT1001R3HN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SML1001R3AN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

SEME-LAB

Seme LAB

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APT
24+
8866
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APT
22+
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8200
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APT
24+
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564
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ADPOW
23+
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19960
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APT
22+
TO-247
8000
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ADV P
23+
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5177
現貨
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APT
23+
2800
正品原裝貨價格低qq:2987726803
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TO247
58000
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2023+
TO-247B
80000
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APT
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TO-247
2050
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更多APT1001R3BN供應商 更新時間2024-12-29 10:50:00