首頁 >AP410E-FCC>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
AP410E-FCC | Wi-Fi 6 (802.11ax) Tri-Radio Access Point With Integrated or External Antenna Options | EXTREMENETWORKS Extreme Networks. | EXTREMENETWORKS | |
Wi-Fi6(802.11ax)Tri-RadioAccessPointWithIntegratedorExternalAntennaOptions | EXTREMENETWORKS Extreme Networks. | EXTREMENETWORKS | ||
Wi-Fi6(802.11ax)Tri-RadioAccessPointWithIntegratedorExternalAntennaOptions | EXTREMENETWORKS Extreme Networks. | EXTREMENETWORKS | ||
Wi-Fi6(802.11ax)Tri-RadioAccessPointWithIntegratedorExternalAntennaOptions | EXTREMENETWORKS Extreme Networks. | EXTREMENETWORKS | ||
Wi-Fi6(802.11ax)Tri-RadioAccessPointWithIntegratedorExternalAntennaOptions | EXTREMENETWORKS Extreme Networks. | EXTREMENETWORKS | ||
Wi-Fi6(802.11ax)Tri-RadioAccessPointWithIntegratedorExternalAntennaOptions | EXTREMENETWORKS Extreme Networks. | EXTREMENETWORKS | ||
Wi-Fi6(802.11ax)Tri-RadioAccessPointWithIntegratedorExternalAntennaOptions | EXTREMENETWORKS Extreme Networks. | EXTREMENETWORKS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
PhotoMOSRelayDimensions | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Nexans |
2021+ |
標準接口 |
285000 |
專供連接器,軍工合格供應商! |
詢價 | ||
AMPHENOL/安費諾 |
2420+ |
/ |
484664 |
一級代理,原裝正品! |
詢價 | ||
AP(友盟) |
21+ |
M |
1780 |
中國航天工業(yè)部戰(zhàn)略合作伙伴行業(yè)領導者 |
詢價 | ||
NA |
24+ |
2650 |
原裝優(yōu)勢!絕對公司現(xiàn)貨 |
詢價 | |||
KEYEBCE |
24+ |
DIP |
87 |
詢價 | |||
基恩士KEYENCE |
23+ |
5235 |
原廠授權代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳 |
詢價 | |||
基恩士KEYENCE |
2020+ |
壓力傳感器 |
500 |
只做原裝，可提供樣品 |
詢價 | ||
KEYENCE |
23+ |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | |||
KEYENCE |
23+ |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | |||
ASAHIKASEI |
21+ |
TSSOP-30 |
23000 |
只做正品原裝現(xiàn)貨 |
詢價 |
相關規(guī)格書
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