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AP410I

Wi-Fi 6 (802.11ax) Tri-Radio Access Point With Integrated or External Antenna Options

EXTREMENETWORKS

Extreme Networks.

AP410I-1-FCC

Wi-Fi 6 (802.11ax) Tri-Radio Access Point With Integrated or External Antenna Options

EXTREMENETWORKS

Extreme Networks.

AP410I-1-WR

Wi-Fi 6 (802.11ax) Tri-Radio Access Point With Integrated or External Antenna Options

EXTREMENETWORKS

Extreme Networks.

AP410I-CAN

Wi-Fi 6 (802.11ax) Tri-Radio Access Point With Integrated or External Antenna Options

EXTREMENETWORKS

Extreme Networks.

AP410I-FCC

Wi-Fi 6 (802.11ax) Tri-Radio Access Point With Integrated or External Antenna Options

EXTREMENETWORKS

Extreme Networks.

AP410I-IL

Wi-Fi 6 (802.11ax) Tri-Radio Access Point With Integrated or External Antenna Options

EXTREMENETWORKS

Extreme Networks.

AP410I-WR

Wi-Fi 6 (802.11ax) Tri-Radio Access Point With Integrated or External Antenna Options

EXTREMENETWORKS

Extreme Networks.

AQV410

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV410EH

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV410EHA

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV410EHAX

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV410EHAZ

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQW410EHA

PhotoMOSRelayDimensions

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

AQY410EH

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQY410EH

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY410EHA

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQY410EHA

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY410EHAX

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQY410EHAX

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY410EHAZ

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

供應商型號品牌批號封裝庫存備注價格
Nexans
2021+
標準接口
285000
專供連接器,軍工合格供應商!
 詢價
AMPHENOL/安費諾
2420+
/
484664
一級代理,原裝正品!
 詢價
AP(友盟)
21+
M
1780
中國航天工業(yè)部戰(zhàn)略合作伙伴行業(yè)領導者
 詢價
NA
24+
2650
原裝優(yōu)勢!絕對公司現(xiàn)貨
 詢價
KEYEBCE
24+
DIP
87
詢價
基恩士KEYENCE
23+
5235
原廠授權代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
基恩士KEYENCE
2020+
壓力傳感器
500
只做原裝，可提供樣品
 詢價
KEYENCE
23+
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
KEYENCE
23+
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
ASAHIKASEI
21+
TSSOP-30
23000
只做正品原裝現(xiàn)貨
 詢價
更多AP410I供應商 更新時間2025-1-3 11:30:00

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