零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
AP410I-WR | Wi-Fi 6 (802.11ax) Tri-Radio Access Point With Integrated or External Antenna Options | EXTREMENETWORKS Extreme Networks. | EXTREMENETWORKS | |
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
PhotoMOSRelayDimensions | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
FixedAttenuators(N,BNC,TNC) | HIROSEHirose Electric Company 廣瀨日本廣瀨電機株式會社 | HIROSE | ||
50ohmswidevarietiesstandardconnectors | HIROSEHirose Electric Company 廣瀨日本廣瀨電機株式會社 | HIROSE | ||
Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Nexans |
2021+ |
標(biāo)準(zhǔn)接口 |
285000 |
專供連接器,軍工合格供應(yīng)商! |
詢價 | ||
AMPHENOL/安費諾 |
2420+ |
/ |
484664 |
一級代理,原裝正品! |
詢價 | ||
AP(友盟) |
21+ |
M |
1780 |
中國航天工業(yè)部戰(zhàn)略合作伙伴行業(yè)領(lǐng)導(dǎo)者 |
詢價 | ||
NA |
24+ |
2650 |
原裝優(yōu)勢!絕對公司現(xiàn)貨 |
詢價 | |||
KEYEBCE |
24+ |
DIP |
87 |
詢價 | |||
基恩士KEYENCE |
23+ |
5235 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳 |
詢價 | |||
基恩士KEYENCE |
2020+ |
壓力傳感器 |
500 |
只做原裝,可提供樣品 |
詢價 | ||
KEYENCE |
23+ |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | |||
KEYENCE |
23+ |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | |||
ASAHIKASEI |
21+ |
TSSOP-30 |
23000 |
只做正品原裝現(xiàn)貨 |
詢價 |
相關(guān)規(guī)格書
更多- AP-4-11
- AP-4-13
- AP4156
- AP4201
- AP4203
- AP4224AGM_14
- AP4224GM
- AP4224GM-HF_16
- AP4224LGM-HF
- AP4224LGM-HF_14
- AP4226AGM
- AP4226AGM-HF_16
- AP4226BGM-HF
- AP4226D
- AP4226GM-HF
- AP4226GM-HF_16
- AP4228GM
- AP4228GM-HF
- AP4228M
- AP4230GM-HF
- AP4230GM-HF_14
- AP4232AGM_14
- AP4232BGM-HF
- AP4232BGM-HF_14
- AP4232GM
- AP4232GM-HF_14
- AP42T03GP
- AP42T03GP_14
- AP4300
- AP4300AM-A
- AP4300AM-AE1
- AP4300AM-ATR
- AP4300AM-ATRE1
- AP4300AM-B
- AP4300AM-BE1
- AP4300AM-BTR
- AP4300AM-BTRE1
- AP4300AP-A
- AP4300AP-AE1
- AP4300AP-B
- AP4300AP-BE1
- AP4300BM-A
- AP4300BM-AE1
- AP4300BM-ATR
- AP4300BM-ATRE1
相關(guān)庫存
更多- AP-4-12
- AP-4-14
- AP4157
- AP4202
- AP4224
- AP4224GM
- AP4224GM-HF_14
- AP4224LGM_16
- AP4224LGM-HF
- AP4224M
- AP4226AGM-HF_14
- AP4226BGM-HF
- AP4226BGM-HF_14
- AP4226GM
- AP4226GM-HF_14
- AP4226M
- AP4228GM
- AP4228GM-HF_14
- AP4230
- AP4230GM-HF
- AP4232AGM
- AP4232AGM-HF
- AP4232BGM-HF
- AP4232BGM-HF_16
- AP4232GM-HF
- AP4236
- AP42T03GP
- AP4300
- AP4300_06
- AP4300AM-A
- AP4300AM-AE1
- AP4300AM-ATR
- AP4300AM-ATRE1
- AP4300AM-B
- AP4300AM-BE1
- AP4300AM-BTR
- AP4300AM-BTRE1
- AP4300AP-A
- AP4300AP-AE1
- AP4300AP-B
- AP4300AP-BE1
- AP4300BM-A
- AP4300BM-AE1
- AP4300BM-ATR
- AP4300BM-ATRE1