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BAV301-TR

SmallSignalSwitchingDiodes,HighVoltage

FEATURES ?Siliconepitaxialplanardiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323/SOT-23footprints ?Electricaldataidenticalwiththedevices ??BAV100toBAV103,BAV200toBAV203 ?AEC-Q101qualified ?Materialcategorization:Fordefinitionsofcompliancepleasese

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BB301

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB301

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB-301

BaseboardforoneTMCM-301/TMCM-341andupto3TMCM-035

TRINAMIC

TRINAMIC Motion Control GmbH & Co. KG.

BB301C

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB301C

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackag

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB301CAW-TL-E

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackag

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB301M

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB301M

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB301MAW-TL-E

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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AOS/萬代
23+
DFN3X3
24190
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
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AOS/萬代
21+
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30000
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AOS/萬代
22+
DFN3X3
18000
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AOS/萬代
24+
DFN3X3
333888
#NAME?
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AOS
23+
QR
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
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三年內(nèi)
1983
只做原裝正品
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AOS
2020+
DFN3*3
80000
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AOS
24+
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65300
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AOSMD
23+
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19960
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1809+
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3675
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
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更多AON301供應(yīng)商 更新時(shí)間2025-4-17 16:01:00

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