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BB301

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB301

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB301C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB301C

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ?BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackag

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB301CAW-TL-E

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ?BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackag

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB301M

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB301M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB301MAW-TL-E

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BC301

PNPSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

NPNSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

MICRO-ELECTRONICS

Micro Electronics

BC301

SmallSignalTransistors

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    BB301

  • 制造商：

    HITACHI

  • 制造商全稱：

    Hitachi Semiconductor

  • 功能描述：

    Build in Biasing Circuit MOS FET IC UHF RF Amplifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NEC
SOT-143
68500
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長期供貨
 詢價(jià)
HITACHI
23+
SO-8
5177
現(xiàn)貨
 詢價(jià)
HITACHI
24+
SOT-143
6000
原裝現(xiàn)貨假一罰十
 詢價(jià)
RENESAS瑞薩/HITACHI日立
24+
SOT-143SOT-23-4
12200
新進(jìn)庫存/原裝
 詢價(jià)
HITACHI
2016+
SOT-143
5000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
RENESAS
24+
SOT343
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
RENESAS
1742+
SOT-143
98215
只要網(wǎng)上有絕對(duì)有貨!只做原裝正品!
 詢價(jià)
SOT-143
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價(jià)
Hitachi
22+23+
Sot-143
27592
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
RENESAS
23+
SOT-143
63000
原裝正品現(xiàn)貨
 詢價(jià)
更多BB301供應(yīng)商 更新時(shí)間2025-3-19 16:09:00

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