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AIMZHN120R030M1T

CoolSiC? 1200 V SiC Trench MOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=69AatTC=25°C ?RDS(on)=30mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswitc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMBG120R030M1

FinaldatasheetCoolSiC?1200VSiCTrenchMOSFET:SiliconCarbideMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=70AatTC=25°C ?RDS(on)=30mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestdev

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMCQ120R030M1T

CoolSiC?AutomotiveMOSFET1200VinHDSOP-22-3package

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=78AatTC=25°C ?RDS(on)=30mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestdev

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMZH120R030M1T

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=69AatTC=25°C ?RDS(on)=30mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswitc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG120R030M1H

EiceDRIVER?1ED314xMU12F(1ED-X3Compact)

Features ?Single-channelisolatedgatedriver ?Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs ?Upto6.5Atypicalpeakoutputcurrent ?45nspropagationdelaywith7nspart-to-partmatching(skew) ?35Vabsolutemaximumoutputsupplyvoltage ?Highcommon-mode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG120R030M1H

CoolSiC??1200VSiCTrenchMOSFETwith.XTinterconnectiontechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMW120R030M1H

CoolSiC??1200VSiCTrenchMOSFETSiliconCarbideMOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZ120R030M1H

CoolSiC??1200VSiCTrenchMOSFETSiliconCarbideMOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZA120R030M1H

SiCN-ChannelMOSFET

FEATURES ·VDSS=1200VatTJ=25°C ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=30mΩ（TYP.）@VGS=18V;TJ=25℃ ·Verylowswitchinglosses ·EasytoParallelandSimpletoDrive APPLICATIONS ·Generalpurposedrives(GPD) ·EV-Charging ·OnlineUPS/IndustrialUPS ·Stringinverters ·

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IMZA120R030M1H

CoolSiC?1200VSiCTrenchMOSFET:SiliconCarbideMOSFETwith.XTinterconnectiontechnology

Features ?VDSS=1200VatTvj=25°C ?IDDC=70AatTc=25°C ?RDS(on)=30mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltagecan

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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TI/德州儀器
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NA
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AI-LINK
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SHA
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更多AIMZHN120R030M1T供應(yīng)商 更新時(shí)間2025-1-6 18:43:00

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