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AIMBG120R030M1

Marking：AS30MM1；Package：PG-TO263-7-HV-ND5.8；Final datasheet CoolSiC? 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=70AatTC=25°C ?RDS(on)=30mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestdev

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMCQ120R030M1T

CoolSiC?AutomotiveMOSFET1200VinHDSOP-22-3package

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=78AatTC=25°C ?RDS(on)=30mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestdev

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMZH120R030M1T

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=69AatTC=25°C ?RDS(on)=30mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswitc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMZHN120R030M1T

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=69AatTC=25°C ?RDS(on)=30mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswitc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG120R030M1H

EiceDRIVER?1ED314xMU12F(1ED-X3Compact)

Features ?Single-channelisolatedgatedriver ?Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs ?Upto6.5Atypicalpeakoutputcurrent ?45nspropagationdelaywith7nspart-to-partmatching(skew) ?35Vabsolutemaximumoutputsupplyvoltage ?Highcommon-mode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG120R030M1H

CoolSiC??1200VSiCTrenchMOSFETwith.XTinterconnectiontechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMW120R030M1H

CoolSiC??1200VSiCTrenchMOSFETSiliconCarbideMOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZ120R030M1H

CoolSiC??1200VSiCTrenchMOSFETSiliconCarbideMOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZA120R030M1H

SiCN-ChannelMOSFET

FEATURES ·VDSS=1200VatTJ=25°C ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=30mΩ（TYP.）@VGS=18V;TJ=25℃ ·Verylowswitchinglosses ·EasytoParallelandSimpletoDrive APPLICATIONS ·Generalpurposedrives(GPD) ·EV-Charging ·OnlineUPS/IndustrialUPS ·Stringinverters ·

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IMZA120R030M1H

CoolSiC?1200VSiCTrenchMOSFET:SiliconCarbideMOSFETwith.XTinterconnectiontechnology

Features ?VDSS=1200VatTvj=25°C ?IDDC=70AatTc=25°C ?RDS(on)=30mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltagecan

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon
23+
PG-TO263-7
15500
英飛凌優(yōu)勢(shì)渠道全系列在售
 詢價(jià)
INFINEON/英飛凌
23+
PG-TO263-7
5000
原裝現(xiàn)貨
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Infineon Technologies
23+
TO263-7
3652
原廠正品現(xiàn)貨供應(yīng)SIC全系列
 詢價(jià)
INFINEON
2023
N/N
20000
全新、原裝正品,假一賠十
 詢價(jià)
Infineon
310
只做正品
 詢價(jià)
Infineon
24+
NA
2285
專注Infineon品牌原裝正品代理分銷,認(rèn)準(zhǔn)水星電子
 詢價(jià)
Advantech
22+
NA
6878
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22+
主板轉(zhuǎn)接卡
8500
全新正品現(xiàn)貨 有掛就有現(xiàn)貨
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ABRACON
23+
SMD
36000
專注電感/現(xiàn)貨足訂貨快價(jià)格優(yōu)品質(zhì)保證
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ABRACON
20+
電感器
17900
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更多AIMBG120R030M1供應(yīng)商 更新時(shí)間2025-3-16 11:00:00

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