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BD647

SiliconNPNDarlingtonPowerTransistor

Eplbasepowerdarlingtontransistors(62.5W) BD643,BD645,BD647,andBD649aremonolithicNPNSiliconepibasepowerdarlingtontransistorswithdiodeandresistorsinaTO220ABplasticpackage(TOP-66).Thecollectorsofthetwotransistorsareelectricallyconnectedtothemetallicmounting

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BD647F

iscSiliconNPNDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BLF647

UHFpowerLDMOStransistor

DESCRIPTION SiliconN-channelenhancementmodelateralD-MOSpush-pulltransistorinaSOT540Apackagewithceramiccap.Thecommonsourceisconnectedtothemountingflange. FEATURES ?Highpowergain ?Easypowercontrol ?Excellentruggedness ?SourceonundersideeliminatesDCisolators

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF647

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF647P

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF647P

BroadbandpowerLDMOStransistor

Generaldescription A200WLDMOSRFpowertransistorforbroadcasttransmitterandindustrial applications.ThetransistorissuitableforthefrequencyrangeHFto1500MHz.The excellentruggednessandbroadbandperformanceofthisdevicemakesitidealfordigital applications. Featuresa

AmpleonAmpleon USA Inc.

安譜隆

BLF647P(S)

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF647PS

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF647PS

BroadbandpowerLDMOStransistor

Generaldescription A200WLDMOSRFpowertransistorforbroadcasttransmitterandindustrial applications.ThetransistorissuitableforthefrequencyrangeHFto1500MHz.The excellentruggednessandbroadbandperformanceofthisdevicemakesitidealfordigital applications. Featuresa

AmpleonAmpleon USA Inc.

安譜隆

C647

500WATTS(AC)DC/DCSINGLEOUTPUT

Features ?SingleOutput ?3Ux42TEx166.5mm ?Weight:3.5kg

POWERBOX

Powerbox manufactures

詳細(xì)參數(shù)

  • 型號(hào)：

    AD647J

  • 制造商：

    AD

  • 制造商全稱：

    Analog Devices

  • 功能描述：

    Ultralow Drift, Dual BiFET Op Amp

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AD
23+
原廠原包
19960
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AD
23+
CAN8
9827
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AD
24+
CAN8
1024
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AD
2015+
SOP/DIP
19889
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AnalogDevices
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1800
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AD
24+
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6980
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AD
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CAN
6521
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AD
16+
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10000
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AD
22+
CAN
8200
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AD
24+
2987
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更多AD647J供應(yīng)商 更新時(shí)間2025-4-17 17:53:00

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