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AD648K

DualPrecision,LowPowerBiFETOpAmp

PRODUCTDESCRIPTION TheAD648isamatchedpairoflowpower,precisionmonolithicoperationalamplifiers.Itoffersbothlowbiascurrent(10pAmax,warmedup)andlowquiescentcurrent(400μAmax)andisfabricatedwithion-implantedFETandlaserwafertrimmingtechnologies.Inputbiascur

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD648KN

DualPrecision,LowPowerBiFETOpAmp

PRODUCTDESCRIPTION TheAD648isamatchedpairoflowpower,precisionmonolithicoperationalamplifiers.Itoffersbothlowbiascurrent(10pAmax,warmedup)andlowquiescentcurrent(400μAmax)andisfabricatedwithion-implantedFETandlaserwafertrimmingtechnologies.Inputbiascur

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD648KR

DualPrecision,LowPowerBiFETOpAmp

PRODUCTDESCRIPTION TheAD648isamatchedpairoflowpower,precisionmonolithicoperationalamplifiers.Itoffersbothlowbiascurrent(10pAmax,warmedup)andlowquiescentcurrent(400μAmax)andisfabricatedwithion-implantedFETandlaserwafertrimmingtechnologies.Inputbiascur

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD648KR-REEL

DualPrecision,LowPowerBiFETOpAmp

PRODUCTDESCRIPTION TheAD648isamatchedpairoflowpower,precisionmonolithicoperationalamplifiers.Itoffersbothlowbiascurrent(10pAmax,warmedup)andlowquiescentcurrent(400μAmax)andisfabricatedwithion-implantedFETandlaserwafertrimmingtechnologies.Inputbiascur

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD648S

DualPrecision,LowPowerBiFETOpAmp

PRODUCTDESCRIPTION TheAD648isamatchedpairoflowpower,precisionmonolithicoperationalamplifiers.Itoffersbothlowbiascurrent(10pAmax,warmedup)andlowquiescentcurrent(400μAmax)andisfabricatedwithion-implantedFETandlaserwafertrimmingtechnologies.Inputbiascur

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD648SCHIPS

DualPrecision,LowPowerBiFETOpAmp

PRODUCTDESCRIPTION TheAD648isamatchedpairoflowpower,precisionmonolithicoperationalamplifiers.Itoffersbothlowbiascurrent(10pAmax,warmedup)andlowquiescentcurrent(400μAmax)andisfabricatedwithion-implantedFETandlaserwafertrimmingtechnologies.Inputbiascur

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD648SQ

DualPrecision,LowPowerBiFETOpAmp

PRODUCTDESCRIPTION TheAD648isamatchedpairoflowpower,precisionmonolithicoperationalamplifiers.Itoffersbothlowbiascurrent(10pAmax,warmedup)andlowquiescentcurrent(400μAmax)andisfabricatedwithion-implantedFETandlaserwafertrimmingtechnologies.Inputbiascur

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD648T

DualPrecision,LowPowerBiFETOpAmp

PRODUCTDESCRIPTION TheAD648isamatchedpairoflowpower,precisionmonolithicoperationalamplifiers.Itoffersbothlowbiascurrent(10pAmax,warmedup)andlowquiescentcurrent(400μAmax)andisfabricatedwithion-implantedFETandlaserwafertrimmingtechnologies.Inputbiascur

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ARF648

FASTRECOVERYDIODE

FASTRECOVERYDIODE Repetitivevoltageupto2500V Meanforwardcurrent2510A Surgecurrent30kA

POSEICO

Power Semiconductors

BD648

PNPSILICONPOWERDARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

BournsBourns Electronic Solutions

伯恩斯

BD648

PNPSILICONDARLINGTONTRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BD648

NPNSILICONDARLINGTONTRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BD648

PNPSILICONPOWERDARLINGTONS

PNPSILICONPOWERDARLINGTONS ?DesignedforComplementaryUsewithBD645,BD647,BD649ANDBD651 ?62.5Wat25°CCaseTemperture ?8AContinuousCollectorCurrent ?MinimumhFEof750at3V,3A

TRSYS

Transys Electronics

BD648

PNPSILICONPOWERDARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

POINN

Power Innovations Ltd

BD648

SiliconPNPPowerTransistors

SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·ComplementtotypeBD645/647/649/651 ·DARLINGTON APPLICATIONS ·Foruseinoutputstagesinaudioequipment,generalamplifier,andanalogueswitchingapplications

SAVANTIC

Savantic, Inc.

BD648

iscSiliconPNPDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BD648

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. NPNcomplementsareBD643,BD645,BD647

COMSET

Comset Semiconductor

BD648

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

BD648

SILICONDARLINGTONPOWERTRANSISTORS

COMSET

Comset Semiconductor

BD648F

iscSiliconPNPDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    AD648JRZ-REEL

  • 功能描述:

    IC OPAMP BIFET 1MHZ DUAL 8SOIC

  • RoHS:

  • 類別:

    集成電路(IC) >> Linear - Amplifiers - Instrumentation

  • 系列:

    -

  • 標(biāo)準(zhǔn)包裝:

    50

  • 放大器類型:

    通用

  • 電路數(shù):

    2

  • 輸出類型:

    滿擺幅

  • 轉(zhuǎn)換速率:

    1.8 V/µs

  • 增益帶寬積:

    6.5MHz

  • -3db帶寬:

    4.5MHz 電流 -

  • 輸入偏壓:

    5nA 電壓 -

  • 輸入偏移:

    100µV 電流 -

  • 電源:

    65µA 電流 -

  • 輸出/通道:

    35mA 電壓 -

  • 電源,單路/雙路(±):

    1.8 V ~ 5.25 V,±0.9 V ~ 2.625 V

  • 工作溫度:

    -40°C ~ 85°C

  • 安裝類型:

    表面貼裝

  • 封裝/外殼:

    10-TFSOP,10-MSOP(0.118,3.00mm 寬)

  • 供應(yīng)商設(shè)備封裝:

    10-MSOP

  • 包裝:

    管件

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全新原裝現(xiàn)貨!自家?guī)齑?
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2020+
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更多AD648JRZ-REEL供應(yīng)商 更新時(shí)間2024-12-29 14:13:00