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首頁 >71V65603S133PFGI>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
71V65603S133PFGI	文件：313.82 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs ZBT? Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S133PFGI	文件：100 bytes Page：1 Pages	包裝：卷帶（TR）封裝/外殼：100-LQFP 類別：集成電路（IC）存儲器描述：IC SRAM 9MBIT PARALLEL 100TQFP	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S133PFGI8	文件：313.82 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs ZBT? Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S133PFGI8	文件：100 bytes Page：1 Pages	包裝：卷帶（TR）封裝/外殼：100-LQFP 類別：集成電路（IC）存儲器描述：IC SRAM 9MBIT PARALLEL 100TQFP	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S133BG	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S133BGG	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S133BGGI	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S133BGI	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S133BQ	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S133BQG	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S133BQGI	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S133BQI	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65603S133PFG	文件：313.82 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
IDT71V65603S133BG	文件：496.4 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDT Integrated Device Technology, Inc.	IDT
IDT71V65603S133BGI	文件：496.4 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDT Integrated Device Technology, Inc.	IDT
IDT71V65603S133BQ	文件：496.4 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDT Integrated Device Technology, Inc.	IDT
IDT71V65603S133BQI	文件：496.4 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDT Integrated Device Technology, Inc.	IDT
IDT71V65603S133PF	文件：496.4 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDT Integrated Device Technology, Inc.	IDT
IDT71V65603S133PFI	文件：496.4 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDT Integrated Device Technology, Inc.	IDT

產(chǎn)品屬性

產(chǎn)品編號：
71V65603S133PFGI
制造商：
Renesas Electronics America Inc
類別：
集成電路（IC） > 存儲器
包裝：
卷帶（TR）
存儲器類型：
易失
存儲器格式：
SRAM
技術(shù)：
SRAM - 同步，SDR（ZBT）
存儲容量：
9Mb（256K x 36）
存儲器接口：
并聯(lián)
電壓 - 供電：
3.135V ~ 3.465V
工作溫度：
-40°C ~ 85°C（TA）
安裝類型：
表面貼裝型
封裝/外殼：
100-LQFP
供應(yīng)商器件封裝：
100-TQFP（14x14）
描述：
IC SRAM 9MBIT PARALLEL 100TQFP

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市鵬順微電子科技有限公司	71V65603S133PFGI	RENESAS(瑞薩)/IDT	2022+原裝正品	TQFP-100	18000	支持工廠BOM表配單公司只做原裝正品貨	詢價
深圳市弘為電子有限公司	71V65603S133PFGI	IDT	16+	原廠封裝	2000	原裝現(xiàn)貨假一罰十	詢價
瀚佳科技(深圳)有限公司	71V65603S133PFGI	IDT, Integrated Device Technol	21+	100-TQFP	56200	一級代理/放心采購	詢價
深圳市艾宇欣科技有限公司	71V65603S133PFGI	IDT	1931+	N/A	1186	加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物	詢價
艾睿國際（香港）有限公司	71V65603S133PFGI	RENESAS(瑞薩)/IDT	2117+	TQFP-100	315000	72個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期	詢價
深圳市科雨電子有限公司	71V65603S133PFGI	IDT	20+	QFP-100	144	就找我吧!--邀您體驗愉快問購元件!	詢價
深圳市冠億通科技有限公司	71V65603S133PFGI	Renesas	21+		25000	原廠原包深圳現(xiàn)貨主打品牌假一賠百可開票!	詢價
訊運(深圳/上海)電子有限公司	71V65603S133PFGI	RENESAS(瑞薩)/IDT	2021+	TQFP-100	499		詢價
深圳市易訊博科技有限公司	71V65603S133PFGI	IDT	22+	NA	1186	加我QQ或微信咨詢更多詳細(xì)信息,	詢價
深圳市智創(chuàng)誠芯電子科技有限公司	71V65603S133PFGI	IDT	22+	N/A	25000	原裝現(xiàn)貨,價格優(yōu)惠,假一罰十	詢價

更多71V65603S133PFGI供應(yīng)商更新時間2024-11-20 15:00:00

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