首頁 >IDT71V65603S133BGI>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IDT71V65603S133BGI | 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs | IDT Integrated Device Technology, Inc. | IDT | |
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT |
詳細參數(shù)
- 型號:
IDT71V65603S133BGI
- 功能描述:
IC SRAM 9MBIT 133MHZ 119BGA
- RoHS:
否
- 類別:
集成電路(IC) >> 存儲器
- 系列:
-
- 標準包裝:
45
- 系列:
- 格式 -
- 存儲器:
RAM
- 存儲器類型:
SRAM - 雙端口,異步
- 存儲容量:
128K(8K x 16)
- 速度:
15ns
- 接口:
并聯(lián)
- 電源電壓:
3 V ~ 3.6 V
- 工作溫度:
0°C ~ 70°C
- 封裝/外殼:
100-LQFP
- 供應商設備封裝:
100-TQFP(14x14)
- 包裝:
托盤
- 其它名稱:
70V25S15PF
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IDT |
23+ |
119-PBGA(14x22) |
9550 |
專業(yè)分銷產品!原裝正品!價格優(yōu)勢! |
詢價 | ||
IDT |
23+ |
119BGA |
9526 |
詢價 | |||
IDT |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IDT |
22+ |
BGA |
5000 |
全新原裝現(xiàn)貨!自家?guī)齑? |
詢價 | ||
IDT |
22+ |
119PBGA (14x22) |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IDT |
21+ |
119PBGA (14x22) |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
IDT |
23+ |
119PBGA (14x22) |
9000 |
原裝正品,支持實單 |
詢價 | ||
IDT |
20+ |
BGA |
9850 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
IDT |
22+ |
BGA |
9852 |
只做原裝正品現(xiàn)貨,或訂貨假一賠十! |
詢價 | ||
IDT |
2021+ |
2089 |
只做原裝假一罰十 |
詢價 |
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