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71V416S12BEI

Package:48-TFBGA;包裝:托盤 類別:集成電路(IC) 存儲器 描述:IC SRAM 4MBIT PARALLEL 48CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V416S12BEI8

Package:48-TFBGA;包裝:卷帶(TR) 類別:集成電路(IC) 存儲器 描述:IC SRAM 4MBIT PARALLEL 48CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V416S12PHG

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

71V416S12PHGI

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

71V416S12YG

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

71V416S12YGI

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

IDT71V416S12BEG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDT

Integrated Device Technology, Inc.

IDT71V416S12BEGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDT

Integrated Device Technology, Inc.

IDT71V416S12PHG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDT

Integrated Device Technology, Inc.

IDT71V416S12PHGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號:

    71V416S12BEI

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    托盤

  • 存儲器類型:

    易失

  • 存儲器格式:

    SRAM

  • 技術(shù):

    SRAM - 異步

  • 存儲容量:

    4Mb(256K x 16)

  • 存儲器接口:

    并聯(lián)

  • 寫周期時(shí)間 - 字,頁:

    12ns

  • 電壓 - 供電:

    3V ~ 3.6V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    48-TFBGA

  • 供應(yīng)商器件封裝:

    48-CABGA(9x9)

  • 描述:

    IC SRAM 4MBIT PARALLEL 48CABGA

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IDT
23+
NA
10726
專做原裝正品,假一罰百!
詢價(jià)
IDT, Integrated Device Technol
21+
484-BBGA
560
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價(jià)格(誠信經(jīng)營
詢價(jià)
IDT, Integrated Device Technol
24+
48-CABGA(9x9)
56200
一級代理/放心采購
詢價(jià)
IDT
1931+
N/A
1353
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物
詢價(jià)
IDT
20+
BGA-48
932
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
RENESAS(瑞薩電子)
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
詢價(jià)
IDT
22+
NA
1353
加我QQ或微信咨詢更多詳細(xì)信息,
詢價(jià)
Integrated Device Technology
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
詢價(jià)
Renesas Electronics Corporatio
23+/24+
48-TFBGA
8600
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨
詢價(jià)
Renesas Electronics America In
24+
48-TFBGA
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
詢價(jià)
更多71V416S12BEI供應(yīng)商 更新時(shí)間2025-1-31 17:00:00