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首頁(yè) >71V424L15PHGI>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
71V424L15PHGI	文件：72.68 Kbytes Page：9 Pages	3.3V CMOS Static RAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
71V424L15PHGI	文件：189.42 Kbytes Page：11 Pages	3.3V CMOS Static RAM 4 Meg (512K x 8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424L15PHGI	文件：100 bytes Page：1 Pages	包裝：卷帶（TR）封裝/外殼：44-TSOP（0.400"，10.16mm 寬）類別：集成電路（IC）存儲(chǔ)器描述：IC SRAM 4MBIT PARALLEL 44TSOP II	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
71V424L15PHGI8	文件：72.68 Kbytes Page：9 Pages	3.3V CMOS Static RAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
71V424L15PHGI8	文件：189.42 Kbytes Page：11 Pages	3.3V CMOS Static RAM 4 Meg (512K x 8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424L15PHGI8	文件：100 bytes Page：1 Pages	包裝：卷帶（TR）封裝/外殼：44-TSOP（0.400"，10.16mm 寬）類別：集成電路（IC）存儲(chǔ)器描述：IC SRAM 4MBIT PARALLEL 44TSOP II	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
71V424L15YG	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
71V424L15YG	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424L15YGI	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424L15YGI	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424L15PH	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424L15PHG	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424L15PHGI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424L15PHI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424L15Y	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424L15YG	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424L15YGI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424L15YI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT

產(chǎn)品屬性

產(chǎn)品編號(hào)：
71V424L15PHGI
制造商：
Renesas Electronics America Inc
類別：
集成電路（IC） > 存儲(chǔ)器
包裝：
卷帶（TR）
存儲(chǔ)器類型：
易失
存儲(chǔ)器格式：
SRAM
技術(shù)：
SRAM - 異步
存儲(chǔ)容量：
4Mb（512K x 8）
存儲(chǔ)器接口：
并聯(lián)
寫(xiě)周期時(shí)間 - 字，頁(yè)：
15ns
電壓 - 供電：
3V ~ 3.6V
工作溫度：
-40°C ~ 85°C（TA）
安裝類型：
表面貼裝型
封裝/外殼：
44-TSOP（0.400"，10.16mm 寬）
供應(yīng)商器件封裝：
44-TSOP II
描述：
IC SRAM 4MBIT PARALLEL 44TSOP II

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
瀚佳科技(深圳)有限公司	71V424L15PHGI	IDT, Integrated Device Technol	24+	44-TSOP II	56200	一級(jí)代理/放心采購(gòu)	詢價(jià)
深圳市芯祺盛科技有限公司	71V424L15PHGI	RENESAS(瑞薩)/IDT	1921+	TSOPII-44	3575	向鴻倉(cāng)庫(kù)現(xiàn)貨,優(yōu)勢(shì)絕對(duì)的原裝!	詢價(jià)
深圳市艾宇欣科技有限公司	71V424L15PHGI	IDT	1931+	N/A	1186	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物	詢價(jià)
艾睿國(guó)際（香港）有限公司	71V424L15PHGI	RENESAS(瑞薩)/IDT	2117+	TSOPII-44	315000	135個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期	詢價(jià)
深圳市科雨電子有限公司	71V424L15PHGI	IDT	20+	TSOP-44	130	就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!	詢價(jià)
萬(wàn)三科技(深圳)有限公司	71V424L15PHGI	RENESAS(瑞薩電子)	22+	NA	500000	萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂	詢價(jià)
深圳市易訊博科技有限公司	71V424L15PHGI	IDT	22+	NA	1186	加我QQ或微信咨詢更多詳細(xì)信息,	詢價(jià)
深圳市高捷芯城科技有限公司	71V424L15PHGI	RENESAS(瑞薩)/IDT	23+	TSOPII4410.2mm	7350	現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!	詢價(jià)
現(xiàn)代芯城（深圳）科技有限公司	71V424L15PHGI		24+	N/A	76000	一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇	詢價(jià)
深圳市諾美思科技有限公司	71V424L15PHGI	Renesas Electronics Corporatio	23+/24+	44-TSOP	8600	只供原裝進(jìn)口公司現(xiàn)貨+可訂貨	詢價(jià)

更多71V424L15PHGI供應(yīng)商更新時(shí)間2025-1-14 14:30:00

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