大香焦网视频免费视频,真人作爱试看120秒,欧美日韩成人

首頁 >71V35761S183PFG>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
71V35761S183PFG	文件：319.72 Kbytes Page：23 Pages	128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V35761S183PFG	文件：100 bytes Page：1 Pages	包裝：托盤封裝/外殼：100-LQFP 類別：集成電路（IC）存儲器描述：IC SRAM 4.5MBIT PARALLEL 100TQFP	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
71V35761S183PFG8	文件：319.72 Kbytes Page：23 Pages	128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V35761S183PFGI	文件：319.72 Kbytes Page：23 Pages	128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V35761S183PFGI8	文件：319.72 Kbytes Page：23 Pages	128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V35761S183PFGI	文件：100 bytes Page：1 Pages	包裝：托盤封裝/外殼：100-LQFP 類別：集成電路（IC）存儲器描述：IC SRAM 4.5MBIT PARALLEL 100TQFP	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
71V35761S183PFGI8	文件：100 bytes Page：1 Pages	包裝：管件封裝/外殼：100-LQFP 類別：集成電路（IC）存儲器描述：IC SRAM 4.5MBIT PARALLEL 100TQFP	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
IDT71V35761S183BG	文件：282.83 Kbytes Page：22 Pages	128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S183BGG	文件：972.44 Kbytes Page：21 Pages	3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S183BGGI	文件：972.44 Kbytes Page：21 Pages	3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S183BGI	文件：282.83 Kbytes Page：22 Pages	128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S183BQ	文件：282.83 Kbytes Page：22 Pages	128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S183BQG	文件：972.44 Kbytes Page：21 Pages	3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S183BQGI	文件：972.44 Kbytes Page：21 Pages	3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S183BQI	文件：282.83 Kbytes Page：22 Pages	128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S183PF	文件：282.83 Kbytes Page：22 Pages	128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S183PFG	文件：972.44 Kbytes Page：21 Pages	3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S183PFGI	文件：972.44 Kbytes Page：21 Pages	3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S183PFI	文件：282.83 Kbytes Page：22 Pages	128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT

產(chǎn)品屬性

產(chǎn)品編號：
71V35761S183PFG
制造商：
Renesas Electronics America Inc
類別：
集成電路（IC） > 存儲器
包裝：
托盤
存儲器類型：
易失
存儲器格式：
SRAM
技術(shù)：
SRAM - 同步，SDR
存儲容量：
4.5Mb（128K x 36）
存儲器接口：
并聯(lián)
電壓 - 供電：
3.135V ~ 3.465V
工作溫度：
0°C ~ 70°C（TA）
安裝類型：
表面貼裝型
封裝/外殼：
100-LQFP
供應(yīng)商器件封裝：
100-TQFP（14x14）
描述：
IC SRAM 4.5MBIT PARALLEL 100TQFP

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市鵬順微電子科技有限公司	71V35761S183PFG	RENESAS(瑞薩)/IDT	2022+原裝正品	TQFP-100(14x14)	18000	支持工廠BOM表配單公司只做原裝正品貨	詢價
瀚佳科技(深圳)有限公司	71V35761S183PFG	IDT, Integrated Device Technol	24+	100-TQFP(14x14)	56200	一級代理/放心采購	詢價
深圳市芯祺盛科技有限公司	71V35761S183PFG	RENESAS(瑞薩)/IDT	1921+	TQFP-100(14x14)	3575	向鴻倉庫現(xiàn)貨,優(yōu)勢絕對的原裝!	詢價
深圳市艾宇欣科技有限公司	71V35761S183PFG	IDT	1931+	N/A	1186	加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物	詢價
艾睿國際（香港）有限公司	71V35761S183PFG	RENESAS(瑞薩)/IDT	2117+	TQFP-100(14x14)	315000	72個/托盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長	詢價
深圳市科雨電子有限公司	71V35761S183PFG	IDT	20+	QFP-100	144	就找我吧!--邀您體驗愉快問購元件!	詢價
訊運(深圳/上海)電子有限公司	71V35761S183PFG	RENESAS(瑞薩)/IDT	2021+	TQFP-100(14x14)	499		詢價
深圳市易訊博科技有限公司	71V35761S183PFG	IDT	22+	NA	1186	加我QQ或微信咨詢更多詳細(xì)信息,	詢價
深圳市高捷芯城科技有限公司	71V35761S183PFG	RENESAS(瑞薩)/IDT	23+	TQFP100(14x20)	7350	現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!!	詢價
現(xiàn)代芯城（深圳）科技有限公司	71V35761S183PFG		24+	N/A	73000	一級代理-主營優(yōu)勢-實惠價格-不悔選擇	詢價

更多71V35761S183PFG供應(yīng)商更新時間2024-12-29 8:24:00

客戶服務(wù) 網(wǎng)站合作

Tel：+86-755-8246-9263
Email：114ic＠114ic.com
投訴建議：web＠114ic.com

Copyright ? 2003-2024 114ic.com All Rights Reserved 粵ICP備05011613號粵公網(wǎng)安備 44030402000933號

<li id="o4mua"><abbr id="o4mua"></abbr></li>

<abbr id="o4mua"><button id="o4mua"></button></abbr>